MIL-PRF-19500 STMicroelectronics, MIL-PRF-19500 Datasheet - Page 10

• Manufacturer Part Number: MIL-PRF-19500
• Description: SEMICONDUCTOR DEVICE/ TRANSISTOR/ NPN/ SILICON/ LOW-POWER TYPES 2N2484/ 2N2484UA/ 2N2484UB/ JAN/ JANTX/ JANTXV/ JANS/ JANHC/ AND JANKC
• Manufacturer: STMicroelectronics

specified herein. If alternate screening is being performed in accordance with MIL-PRF-19500, a sample of
screened devices shall be submitted to and pass the requirements of group A1 and A2 inspection only (table VIb,
group B, subgroup 1 is not required to be performed again if group B has already been satisfied in accordance with
4.4.2).
herein.
subgroup testing in table VIa (JANS) of MIL-PRF-19500 and 4.4.2.1. Electrical measurements (end-points) shall be
in accordance with group A, subgroup 2 herein. Delta requirements shall be in accordance with table III herein.
See 4.4.2.2 for JAN, JANTX, and JANTXV group B testing. Electrical measurements (end-points) and delta
requirements for JAN, JANTX, and JANTXV shall be after each step in 4.4.2.2 and shall be in accordance with
group A, subgroup 2 herein. Delta requirements shall be after each step and shall be in accordance with table III
herein.
event of a group B failure, the manufacturer may pull a new sample at double size from either the failed assembly
lot or from another assembly lot from the same wafer lot. If the new “assembly lot” option is exercised, the failed
assembly lot shall be scrapped.
4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500, and as
4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500 and table I
4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for
4.4.2.1 Group B inspection, table VIa (JANS) of MIL-PRF-19500.
4.4.2.2 Group B inspection, (JAN, JANTX, and JANTXV). Separate samples may be used for each step. In the
Subgroup Method
Step
1
2
3
B5
B4
Method
1039
1032
1037
1027
1039
Steady-state life: Test condition B, 340 hours, V
external heating of the device under test to achieve T
provided that a minimum of 75% of rated power is dissipated. No heat sink or forced-air
cooling on the devices shall be permitted. n = 45 devices, c = 0
The steady state life test of step 1 shall be extended to 1,000 hours for each die design.
Samples shall be selected from a wafer lot every twelve months of wafer production.
Group B, step 2 shall not be required more than once for any single wafer lot. n = 45,
c = 0.
High-temperature life (non-operating), t = 340 hours, T
Condition
V
V
T
minimum 216 hours with P
option) n = 45, c = 0. In this case, the ambient temperature shall be adjusted such that a
minimum 75 percent of maximum rated P
(Note: If a failure occurs, resubmission shall be at the test conditions of the original
sample.)
Condition
A
CB
CB
to give T
= 10 V dc
= 10 V dc; T
J
= +275 C minimum. Optionally, the test may be conducted for
A
= +125 C 25 C for 96 hours with P
MIL-PRF-19500/376E
T
adjusted to achieve T
10
T
(see 1.3) is applied to the device under test.
CB
J
= 10 -30 V dc, T
= 225 C minimum, sample size (for
J
= +150 C minimum is allowed
A
T
= +200 C. n = 22, c = 0.
adjusted according to the chosen
J
= 150 C min.,