DT28F016SV-080 Intel Corporation, DT28F016SV-080 Datasheet - Page 52

• Manufacturer Part Number: DT28F016SV-080
• Description: 16-MBIT (1 MBIT x 16/ 2 MBIT x 8) FlashFile MEMORY
• Manufacturer: Intel Corporation

28F016SV FlashFile™ MEMORY
5.9 AC Characteristics for CE#—Controlled Command Write Operations
V
NOTES:
1. Read timings during program and erase are the same as for normal read.
2. Refer to command definition tables for valid address and data values.
3. Sampled, not 100% tested. Guaranteed by design.
4. Program/erase durations are measured to valid Status Data. V
5. Word/byte program operations are typically performed with 1 Programming Pulse.
6. Address and Data are latched on the rising edge of CE# for all command write operations.
7. CE
8. Device speeds are defined as:
9. See the high speed AC Input/Output Reference Waveforms and AC Testing Load Circuit.
10. See the standard AC Input/Output Reference Waveforms and AC Testing Load Circuit.
11. The TBD information will be available in a technical paper. Please contact Intel’s Application Hotline or your local sales
52
CC
t
t
t
t
t
PHEL
EHGL
QVVL
EHQV
EHQV
office for more information.
Sym
= 5V ± 0.5V, 5V ± 0.25V, T
(Continued)
X
1,2 V
1
2
# is defined as the latter of CE
65/70 ns at V
75 ns at V
70/80 ns at V
120 ns at V
RP# High Recovery
to CE# Going Low
Write Recovery
before Read
Status Register
(CSR, GSR, BSR)
Data at RY/BY# High
Duration of Program
Operation
Duration of Block
Erase Operation
PP
Hold from Valid
Parameter
CC
CC
CC
CC
= 3.3V
= 3.3V
= 5V equivalent to
= 5V equivalent to
3,4,5,11
A
Speed
Notes
Temp
Load
0
V
= 0° to +70°C, –40°C to +85°C
3,7
3,4
# or CE
CC
3
0.300
1
Min
# going low, or the first of CE
4.5
0.3
55
0
5V ± 5%
30 pF
–65
Typ
0.6
6
Max
TBD
Commercial
10
PP
= 12V ± 0.6V.
0.300
Min
1
4.5
0.3
60
(9)
0
0
(10)
# or CE
5V ± 10%
50 pF
–70
Typ
0.6
6
1
# going high.
TBD
Max
10
Min
4.5
0.3
65
1
0
Extended
5V ± 10%
50 pF
–80
Typ
0.6
6
E
(1)
Max
TBD
10
Unit
sec
µs
ns
µs
µs