DT28F016SV-080 Intel Corporation, DT28F016SV-080 Datasheet - Page 32

• Manufacturer Part Number: DT28F016SV-080
• Description: 16-MBIT (1 MBIT x 16/ 2 MBIT x 8) FlashFile MEMORY
• Manufacturer: Intel Corporation

28F016SV FlashFile™ MEMORY
5.3 DC Characteristics
V
3/5# = Pin Set High for 3.3V Operations
NOTES:
1. All currents are in RMS unless otherwise noted. Typical values at V
2. I
3. Block erases, word/byte programs and lock block operations are inhibited when V
4. Automatic Power Savings (APS) reduces I
5. CMOS Inputs are either V
6. Sampled, but not 100% tested. Guaranteed by design.
32
CC
V
V
V
V
V
V
OH
OH
PPLK
PPH1
PPH2
LKO
are valid for all product versions (package and speeds).
I
ranges between V
CCES
CCES
Sym
= 3.3V ± 0.3V, T
1
2
is specified with the device de-selected. If the device is read while in erase suspend mode, current draw is the sum of
and I
CCR
Output High
Voltage
V
Lock Voltage
V
Program/Erase
Operations
V
Program/Erase
Operations
V
Lock Voltage
PP
PP
PP
CC
.
Program/Erase
during
during
Parameter
Program/Erase
PPLK
A
(max) and V
= 0°C to +70°C
CC
± 0.2V or GND ± 0.2V. TTL Inputs are either V
(Continued)
PPH1
Temp
Notes
(min), between V
3,6
,
6
6
3
3
–40°C to +85°C
CCR
to 3.0 mA typical in static operation.
V
11.4
Min
2.4
0.2
0.0
4.5
2.0
CC
–
Comm/Ext
PPH1
12.0
Typ
5.0
(max) and V
CC
Max
12.6
1.5
5.5
= 3.3V, V
PPH2
IL
Units
(min) and above V
or V
V
V
V
V
V
V
PP
PP
IH
= 12V or 5V, T = +25°C. These currents
.
V
I
V
I
OH
OH
V
CC
CC
PPLK
= –2.0 mA
= –100 µA
= V
= V
and not guaranteed in the
Test Conditions
CC
CC
PPH2
Min
Min
(max).
E