DT28F016SV-080 Intel Corporation, DT28F016SV-080 Datasheet - Page 47

• Manufacturer Part Number: DT28F016SV-080
• Description: 16-MBIT (1 MBIT x 16/ 2 MBIT x 8) FlashFile MEMORY
• Manufacturer: Intel Corporation

E
5.8 AC Characteristics for WE#—Controlled Command Write Operations
V
NOTES:
1. Read timings during program and erase are the same as for normal read.
2. Refer to command definition tables for valid address and data values.
3. Sampled, not 100% tested. Guaranteed by design.
4. Program/erase durations are measured to valid Status Register (CSR) Data. V
5. Word/byte program operations are typically performed with 1 Programming Pulse.
6. Address and Data are latched on the rising edge of WE# for all command write operations.
7. CE
8. Device speeds are defined as:
9. See the high speed AC Input/Output Reference Waveforms and AC Testing Load Circuit.
10. See the standard AC Input/Output Reference Waveforms and AC Testing Load Circuit.
11. The TBD information will be available in a technical paper. Please contact Intel’s Application Hotline or your local sales
12. Page Buffer Programs only.
CC
t
t
t
t
t
t
PHWL
WHGL
QVVL
QVV
WHQV
WHQV
Sym
office for more information.
= 5V ± 0.5V, 5V ± 0.25V, T
(Continued)
L 2
X
1
# is defined as the latter of CE
1 Duration of
2 Duration of Block
65/70 ns at V
75 ns at V
70/80 ns at V
120 ns at V
RP# High
Recovery to WE#
Going Low
Write Recovery
before Read
V
Valid Status
Register (CSR,
GSR, BSR) Data
and RY/BY# High
Program Operation
Erase Operation
PP
Parameter
Hold from
CC
CC
CC
CC
= 3.3V
= 3.3V
= 5V equivalent to
= 5V equivalent to
Speed
Temp
Notes
3,4,5,
Load
V
3,4
11
CC
3
3
A
0
= 0°C to +70°C, –40°C to +85°C
# or CE
0.300
Min
4.5
0.3
55
0
1
# going low, or the first of CE
5V ± 5%
30 pF
Typ
–65
0.6
6
TBD
Max
Commercial
10
0.300
Min
1
4.5
0.3
60
(9)
0
(10)
5V ± 10%
0
# or CE
50 pF
–70
Typ
0.6
PP
28F016SV FlashFile™ MEMORY
6
= 12V ± 0.6V.
1
# going high.
Max
TBD
10
Min
4.5
0.3
65
1
0
Extended
5V ± 10%
50 pF
Typ
–80
0.6
6
(1)
Max
TBD
10
Unit
sec
µs
ns
µs
µs
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