MT58L128L18F Micron Semiconductor Products, Inc., MT58L128L18F Datasheet - Page 7

• Manufacturer Part Number: MT58L128L18F
• Description: 2Mb Syncburst SRAM, 3.3V Vdd, 3.3V or 2.5V I/O, Flow-Through,
• Manufacturer: Micron Semiconductor Products, Inc.

NOT RECOMENDED FOR NEW DESIGNS
INTERLEAVED BURST ADDRESS TABLE (MODE = NC OR HIGH)
LINEAR BURST ADDRESS TABLE (MODE = LOW)
2Mb: 128K x 18, 64K x 32/36 Flow-Through SyncBurst SRAM
MT58L128L18F_C.p65 – Rev. C, Pub. 11/02
FIRST ADDRESS (EXTERNAL)
FIRST ADDRESS (EXTERNAL)
X...X00
X...X01
X...X10
X...X11
X...X00
X...X01
X...X10
X...X11
NOTE: Using BWE# and BWa# through BWd#, any one or more bytes may be written.
FUNCTION
READ
READ
WRITE Byte “a”
WRITE All Bytes
WRITE All Bytes
PARTIAL TRUTH TABLE FOR WRITE COMMANDS (x32/x36)
PARTIAL TRUTH TABLE FOR WRITE COMMANDS (x18)
FUNCTION
READ
READ
WRITE Byte “a”
WRITE Byte “b”
WRITE All Bytes
WRITE All Bytes
SECOND ADDRESS (INTERNAL)
SECOND ADDRESS (INTERNAL)
X...X01
X...X00
X...X11
X...X10
X...X01
X...X10
X...X11
X...X00
GW#
H
H
H
H
L
BWE#
GW#
H
X
L
L
L
H
H
H
H
H
L
FLOW-THROUGH SYNCBURST SRAM
7
THIRD ADDRESS (INTERNAL)
THIRD ADDRESS (INTERNAL)
BWa#
BWE#
X
H
X
L
L
H
X
L
L
L
L
2Mb: 128K x 18, 64K x 32/36
X...X10
X...X11
X...X00
X...X01
X...X10
X...X11
X...X00
X...X01
BWb#
BWa#
Micron Technology, Inc., reserves the right to change products or specifications without notice.
H
H
X
X
L
H
H
X
X
L
L
BWc#
BWb#
X
H
H
X
L
H
H
X
X
L
L
FOURTH ADDRESS (INTERNAL)
FOURTH ADDRESS (INTERNAL)
BWd#
H
H
X
X
L
X...X11
X...X10
X...X01
X...X00
X...X11
X...X00
X...X01
X...X10
©2002, Micron Technology, Inc.