MT57V256H36P Micron Semiconductor Products, Inc., MT57V256H36P Datasheet - Page 11

• Manufacturer Part Number: MT57V256H36P
• Description: 9Mb DDR SRAM 2.5V Vdd, HSTL Pipelined
• Manufacturer: Micron Semiconductor Products, Inc.

CAPACITANCE
THERMAL RESISTANCE
NOTE: 1. This parameter is sampled.
256K x 36 2.5V V
MT57V256H36P_5.p65 – Rev. 5, Pub. 5/02
DESCRIPTION
Address/Control Input Capacitance
Input/Output Capacitance (DQ)
Clock Capacitance
DESCRIPTION
Junction to Ambient (Airflow of 1m/s) Soldered on a 4.25 x 1.125 inch,
Junction to Case (Top)
Junction to Balls (Bottom)
2. Average thermal resistance between the die and the case top surface per MIL SPEC 883 Method 1012.1.
3. Junction temperature is a function of total device power dissipation and device mounting environment. Measured per
DD
SEMI G38-87.
, HSTL, Pipelined DDR SRAM
4-layer printed circuit board
T
A
= 25°C; f = 1 MHz
CONDITIONS
CONDITIONS
2.5V V
11
DD
Micron Technology, Inc., reserves the right to change products or specifications without notice.
, HSTL, PIPELINED DDR SRAM
SYMBOL
C
C
C
CK
O
I
SYMBOL
JA
JC
JB
TYP
4
6
5
TYP
25
10
12
MAX
5
7
6
UNITS
°C/W
°C/W
°C/W
256K x 36
UNITS
©2002, Micron Technology, Inc.
pF
pF
pF
NOTES
NOTES
1, 2
1, 3
1
1
1
1