MT55L128L32P1 Micron Semiconductor Products, Inc., MT55L128L32P1 Datasheet - Page 22

• Manufacturer Part Number: MT55L128L32P1
• Description: 4Mb ZBT SRAM, 3.3V Vdd, 3.3V or 2.5V I/O, Pipelined,
• Manufacturer: Micron Semiconductor Products, Inc.

READ/WRITE TIMING PARAMETERS
NOTE: 1. For this waveform, ZZ is tied LOW.
4Mb: 256K x 18, 128K x 32/36 Pipelined ZBT SRAM
MT55L256L18P1_F.p65 – Rev. F, Pub. 1/03 EN
SYM
t
f
t
t
t
t
t
t
t
t
COMMAND
KHKH
KF
KHKL
KLKH
KHQV
KHQX
KHQX1
KHQZ
GLQV
GLQX
ADDRESS
ADV/LD#
BWx#
R/W#
2. Burst sequence order is determined by MODE (0 = linear, 1 = interleaved). BURST operations are optional.
3. CE# represents three signals. When CE# = 0, it represents CE# = 0, CE2# = 0, CE2 = 1.
4. Data coherency is provided for all possible operations. If a READ is initiated, the most current data is used. The most
CKE#
OE#
CLK
CE#
MIN
DQ
6.0
1.7
1.7
1.5
1.5
1.5
recent data may be from the input data register.
0
-6
t
t
t
EVKH
CVKH
AVKH
MAX
166
3.5
3.5
3.5
WRITE
D(A1)
A1
1
t
t
KHEX
t
KHAX
KHCX
MIN
7.5
2.0
2.0
1.5
1.5
1.5
0
-7.5
WRITE
D(A2)
2
MAX
A2
133
t
4.2
3.5
4.2
KHKL
t KHKH
t
t
DVKH
KLKH
MIN
D(A2+1)
3.2
3.2
1.5
1.5
1.5
BURST
WRITE
10
D(A1)
0
3
-10
t
KHDX
MAX
100
5.0
3.5
5.0
READ/WRITE TIMING
D(A2)
READ
Q(A3)
A3
4
UNITS
MHz
ns
ns
ns
ns
ns
ns
ns
ns
ns
22
D(A2+1)
Q(A4)
READ
A4
5
t
t
KHQV
KHQX1
SYM
t
t
t
t
t
t
t
t
t
GHQZ
AVKH
EVKH
CVKH
DVKH
KHAX
KHEX
KHCX
KHDX
4Mb: 256K x 18, 128K x 32/36
Q(A4+1)
BURST
READ
Q(A3)
6
MIN
t
1.5
1.5
1.5
1.5
0.5
0.5
0.5
0.5
KHQX
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t
-6
GHQZ
MAX
WRITE
3.5
D(A5)
Q(A4)
A5
7
PIPELINED ZBT SRAM
DON’T CARE
MIN
t
GLQV
1.7
1.7
1.7
1.7
0.5
0.5
0.5
0.5
t
GLQX
-7.5
Q(A6)
Q(A4+1)
READ
A6
8
MAX
t
t
KHQX
4.2
KHQZ
WRITE
MIN
D(A7)
2.0
2.0
2.0
2.0
0.5
0.5
0.5
0.5
D(A5)
9
A7
©2003, Micron Technology, Inc.
-10
UNDEFINED
MAX
5.0
DESELECT
10
Q(A6)
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns