MT55L128L18F1 Micron Semiconductor Products, Inc., MT55L128L18F1 Datasheet - Page 2

• Manufacturer Part Number: MT55L128L18F1
• Description: 2Mb ZBT SRAM, 3.3V Vdd, 3.3V I/O, Flow-Through,
• Manufacturer: Micron Semiconductor Products, Inc.

NOT RECOMENDED FOR NEW DESIGNS
NOTE: Functional Block Diagrams illustrate simplified device operation. See Truth Table, Pin Descriptions and timing diagrams
2Mb: 128K x 18, 64K x 32/36 3.3V I/O, Flow-Through ZBT SRAM
MT55L128L18F1_C.p65 – Rev. C, Pub. 11/02
CKE#
CLK
CKE#
CLK
for detailed information.
SA0, SA1, SA
SA0, SA1, SA
ADV/LD#
ADV/LD#
BWb#
BWa#
MODE
R/W#
BWb#
BWd#
CE2#
BWa#
K
BWc#
MODE
R/W#
OE#
CE#
CE2
CE2#
K
OE#
CE#
CE2
CE
CE
17
16
ADDRESS
REGISTER
ADDRESS
REGISTER
READ LOGIC
READ LOGIC
WRITE ADDRESS
WRITE ADDRESS
AND DATA COHERENCY
FUNCTIONAL BLOCK DIAGRAM
FUNCTIONAL BLOCK DIAGRAM
REGISTER
AND DATA COHERENCY
REGISTER
WRITE REGISTRY
CONTROL LOGIC
ADV/LD#
WRITE REGISTRY
CONTROL LOGIC
ADV/LD#
17
16
K
K
SA1
SA0
SA1
SA0
D1
D0
D1
D0
64K x 32/36
128K x 18
BURST
LOGIC
BURST
LOGIC
15
14
3.3V I/O, FLOW-THROUGH ZBT SRAM
Q1
Q0
2
18
36
Q1
Q0
SA0'
SA1'
SA1'
SA0'
17
16
DRIVERS
DRIVERS
17
WRITE
16
17
WRITE
16
2Mb: 128K x 18, 64K x 32/36
Micron Technology, Inc., reserves the right to change products or specifications without notice.
64K x 8 x 4
64K x 9 x 4
128K x 9 x 2
MEMORY
MEMORY
ARRAY
ARRAY
(x32)
(x36)
36
18
REGISTER
REGISTER
INPUT
INPUT
M
N
A
S
E
S
E
P
S
M
N
A
E
E
P
S
S
S
E
E
D
A
T
A
T
E
E
R
N
G
S
I
D
A
A
N
G
T
S
T
E
E
R
I
O
U
U
B
U
R
T
P
T
F
F
E
S
E
O
U
U
U
T
P
T
B
F
F
E
R
S
©2002, Micron Technology, Inc.
36
E
18
36
18
DQPa
DQPb
DQPd
DQPc
DQs
DQPa
DQPb
DQs