MT55L128L18F1 Micron Semiconductor Products, Inc., MT55L128L18F1 Datasheet - Page 15

• Manufacturer Part Number: MT55L128L18F1
• Description: 2Mb ZBT SRAM, 3.3V Vdd, 3.3V I/O, Flow-Through,
• Manufacturer: Micron Semiconductor Products, Inc.

NOT RECOMENDED FOR NEW DESIGNS
READ/WRITE TIMING PARAMETERS
NOTE: 1. For this waveform, ZZ is tied LOW.
2Mb: 128K x 18, 64K x 32/36 3.3V I/O, Flow-Through ZBT SRAM
MT55L128L18F1_C.p65 – Rev. C, Pub. 11/02
COMMAND
SYMBOL
t
f
t
t
t
t
t
t
t
t
KHKH
KF
KHKL
KLKH
KHQV
KHQX
KHQX1
KHQZ
GLQV
GLQX
ADDRESS
ADV/LD#
BWx#
R/W#
CKE#
2. Burst sequence order is determined by MODE (0 = linear, 1 = interleaved). BURST operations are optional.
3. CE# represents three signals. When CE# = 0, it represents CE# = 0, CE2# = 0, CE2 = 1.
4. Data coherency is provided for all possible operations. If a READ is initiated, the most current data is used. The most
OE#
CLK
CE#
DQ
recent data may be from the input data register.
t EVKH
t CVKH
t AVKH
WRITE
D(A1)
A1
1
t KHEX
t KHCX
t KHAX
t DVKH
WRITE
D(A1)
D(A2)
A2
2
t KHKL
MIN MAX MIN MAX UNITS
t KHDX
3.0
3.0
3.0
3.0
10
0
t KHKH
-10
t KLKH
100
7.5
5.0
5.0
D(A2+1)
BURST
WRITE
D(A2)
3
4.0
4.0
3.0
3.0
12
0
-12
READ/WRITE TIMING
9.0
5.0
5.0
83
D(A2+1)
READ
Q(A3)
A3
4
MHz
t KHQV
t KHQX1
ns
ns
ns
ns
ns
ns
ns
ns
ns
3.3V I/O, FLOW-THROUGH ZBT SRAM
15
Q(A4)
READ
Q(A3)
A4
5
t KHQX
SYMBOL
t
t
t
t
t
t
t
t
t
GHQZ
AVKH
EVKH
CVKH
DVKH
KHAX
KHEX
KHCX
KHDX
t GHQZ
Q(A4+1)
BURST
Q(A4)
READ
2Mb: 128K x 18, 64K x 32/36
6
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t GLQV
t GLQX
Q(A4+1)
WRITE
D(A5)
A5
7
t KHQZ
t KHQX
DON’T CARE
READ
Q(A6)
A6
D(A5)
8
MIN MAX MIN MAX UNITS
2.0
2.0
2.0
2.0
0.5
0.5
0.5
0.5
-10
5.0
WRITE
D(A7)
Q(A6)
A7
9
©2002, Micron Technology, Inc.
2.5
2.5
2.5
2.5
0.5
0.5
0.5
0.5
UNDEFINED
-12
5.0
DESELECT
D(A7)
10
ns
ns
ns
ns
ns
ns
ns
ns
ns