MT54V512H18E Micron Semiconductor Products, Inc., MT54V512H18E Datasheet - Page 13

• Manufacturer Part Number: MT54V512H18E
• Description: 9Mb QDR SRAM, 2.5V Vdd, HSTL , 4-Word Burst,
• Manufacturer: Micron Semiconductor Products, Inc.

AC Test Conditions
512K x 18, 2.5V V
MT54V512H18E_16_A.fm - Rev 10/02
Input pulse levels . . . . . . . . . . . . . . . . . . 0.25V to 1.25V
Input rise and fall times . . . . . . . . . . . . . . . . . . . . 0.7ns
Input timing reference levels . . . . . . . . . . . . . . . . 0.75V
Output reference levels . . . . . . . . . . . . . . . . . . .V
ZQ for 50W impedance . . . . . . . . . . . . . . . . . . . . . 250W
Output load . . . . . . . . . . . . . . . . . . . . . . . . . See Figure 5
DD
, HSTL, QDRb4 SRAM
DD
0.16µm Process
Q/2
13
SRAM
2.5V V
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Output Load Equivalent
DD
V
ZQ
REF
, HSTL, QDRb4 SRAM
Figure 5:
0.75V
250
Z = 50
O
512K x 18
©2002, Micron Technology Inc.
V
ADVANCE
DD
Q/2
50