MT54V512H18A Micron Semiconductor Products, Inc., MT54V512H18A Datasheet - Page 19

• Manufacturer Part Number: MT54V512H18A
• Description: 9Mb QDR SRAM, 2.5V Vdd, Hstl, 2-Word Burst,
• Manufacturer: Micron Semiconductor Products, Inc.

TAP AC Test Conditions
Table 13: TAP DC Electrical Characteristics And Operating Conditions
0°C £ T
NOTE:
512K x 18 2.5V V
MT54V512H18A_16_A.fm - Rev 10/02
1. All voltages referenced to V
2. Overshoot: V
DESCRIPTION
Input High (Logic 1) Voltage
Input Low (Logic 0) Voltage
Input Leakage Current
Output Leakage Current
Output Low Voltage
Output Low Voltage
Output High Voltage
Output High Voltage
Input pulse levels . . . . . . . . . . . . . . . . . . . . . V
Input rise and fall times . . . . . . . . . . . . . . . . . . . . . . 1ns
Input timing reference levels . . . . . . . . . . . . . . . . 1.25V
Output reference levels . . . . . . . . . . . . . . . . . . . . . 1.25V
Test load termination supply voltage . . . . . . . . . 1.25V
Undershoot: V
Power-up:
During normal operation, V
widths less than
A
£ +70°C; +2.4V £ V
DD
, HSTL, QDRb2 SRAM (Footer Desc variable)
V
IH
IH
IL
(
(
AC
£ +2.6 and V
AC
t
KHKL (MIN) or operate at frequencies exceeding
) ³ -0.5V for t £
) £ V
DD
DD
+ 0.7V for t £
£ +2.6V unless otherwise noted
DD
SS
DD
(GND).
Q must not exceed V
£ +2.4V and V
0V £ V
t
KHKH/2
Output(s) disabled,
0V £ V
I
CONDITIONS
I
OHC
I
OLC
I
OHT
OLT
IN
t
KHKH/2
£ V
= -100µA
= 100µA
= -2mA
= 2mA
IN
DD
SS
DD
£ V
Q (DQx)
to 2.5V
Q £ 1.4V for t £ 200ms
0.16µm Process
DD
DD
. Control input signals (LD#, R/W#, etc.) may not have pulse
19
SYMBOL
V
V
V
V
V
IL
V
OH
OH
IL
OL
OL
IH
IL
O
f
I
KF (MAX).
2.5V V
1
2
1
1
Micron Technology, Inc., reserves the right to change products or specifications without notice.
TAP AC Output Load Equivalent
TDO
MIN
-0.3
-5.0
-5.0
1.7
2.1
1.7
DD
, HSTL, QDRb2 SRAM
Figure 10:
Z = 50
O
V
DD
MAX
0.7
5.0
5.0
0.2
0.7
+ 0.3
1.25V
512K x 18
UNITS
©2002, Micron Technology Inc.
20pF
50
µA
µA
V
V
V
V
V
V
ADVANCE
NOTES
1, 2
1, 2
1
1
1