MT54V1MH18E Micron Semiconductor Products, Inc., MT54V1MH18E Datasheet - Page 15

• Manufacturer Part Number: MT54V1MH18E
• Description: 18Mb QDR SRAM, 2.5V Vdd, Hstl, 4-Word Burst,
• Manufacturer: Micron Semiconductor Products, Inc.

AC Test Conditions
18Mb: 2.5V V
MT54V1MH18E_16_F.fm – Rev. F, Pub. 3/03
Input pulse levels ................................ 0.25V to 1.25V
Input rise and fall times...................................... 0.7ns
Input timing reference levels .............................0.75V
Output reference levels...................................V
ZQ for 50 W impedance ...........................................250W
Output load ..............................................See Figure 5
DD
, HSTL, QDRb4 SRAM
DD
Q/2
15
2.5V V
Micron Technology, Inc., reserves the right to change products or specifications without notice.
SRAM
Output Load Equivalent
DD
1 MEG x 18, 512K x 36
V
ZQ
REF
, HSTL, QDRb4 SRAM
Figure 5:
0.75V
250Ω
Z = 50Ω
O
V
©2003 Micron Technology, Inc.
DD
Q/2
50Ω