MT54V1MH18E Micron Semiconductor Products, Inc., MT54V1MH18E Datasheet - Page 12

• Manufacturer Part Number: MT54V1MH18E
• Description: 18Mb QDR SRAM, 2.5V Vdd, Hstl, 4-Word Burst,
• Manufacturer: Micron Semiconductor Products, Inc.

Table 9:
Notes appear following parameter tables on page 14; 0°C £ T
Table 10: Capacitance
Note 13; notes appear following parameter tables on page 14
Table 11: Thermal Resistance
Note 13; notes appear following parameter tables on page 14
18Mb: 2.5V V
MT54V1MH18E_16_F.fm – Rev. F, Pub. 3/03
DESCRIPTION
Stop Clock Current
DESCRIPTION
DESCRIPTION
Operating Supply
Current: DDR
Standby Supply
Current: NOP
Output Supply
Current: DDR
(Information only)
Address/Control Input Capacitance
Output Capacitance (Q)
Clock Capacitance
Junction to Ambient
(Airflow of 1m/s)
Junction to Case (Top)
Junction to Balls (Bottom)
.
DD
, HSTL, QDRb4 SRAM
I
DD
Operating Conditions and Maximum Limits
All inputs £ V
100% bus utilization; 50% address
and data bits toggling on each
³
t
KHKH (MIN); Outputs open;
All addresses/data static
t
KHKH =
Device in NOP state;
Cycle time = 0;
CONDITIONS
Input Static
clock cycle
C
IL
L
or
t
= 15pF
KHKH (MIN);
Soldered on a 4.25 x 1.125 inch,
³
4-layer printed circuit board
V
IH
T
; Cycle time
A
= 25ºC; f = 1 MHz
CONDITIONS
CONDITIONS
SYM
I
12
x18
x36
I
x18
x36
DD
x18
x36
I
A
I
SB1
DD
SB
£ +70°C; V
Q
TYP
TBD
TBD
TBD
TBD
2.5V V
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DD
SYMBOL
= 2.5V ±0.1V unless otherwise noted
300
410
170
180
C
C
75
25
57
-5
C
CK
SYMBOL
O
I
q
DD
q
q
JA
JC
JB
1 MEG x 18, 512K x 36
250
350
145
155
75
21
47
, HSTL, QDRb4 SRAM
-6
MAX
TYP
4.5
5.5
6
-7.5
230
300
125
135
19.4
75
17
38
TYP
1.0
9.6
200
260
110
120
-10
75
13
19
MAX
5.5
6.5
UNITS
ºC/W
ºC/W
7
ºC/W
©2003 Micron Technology, Inc.
UNITS
mA
mA
mA
mA
NOTES
UNITS
pF
pF
pF
NOTES
10, 11
14
15
8, 10
10
12