MT28C3224P18 Micron Semiconductor Products, Inc., MT28C3224P18 Datasheet - Page 13

• Manufacturer Part Number: MT28C3224P18
• Description: 2 Meg X 16 Page Flash, 256K X 16 SRAM Combo Memory, 66-ball Fbga
• Manufacturer: Micron Semiconductor Products, Inc.

2 Meg x 16 Page Flash 256K x 16 SRAM Combo Memory
MT28C3224P20_4.p65 – Rev. 4, Pub. 10/02
CODE DEVICE MODE
D0h
D0h
FFh
01h
2Fh
00h
Erase Confirm
Program/Erase
Resume
Read Array
Lock Block
Lock Down
Unlock Block
Invalid/Reserved
BUS CYCLE
Second
Second
Second
Second
Command Descriptions (continued)
First
First
If a PROGRAM or ERASE operation was previously suspended, this
If the previous command was an ERASE SETUP command, then the
CSM closes the address and data latches, and it begins erasing the
block indicated on the address pins. During programming/erase, the
device responds only to the READ STATUS REGISTER, PROGRAM
SUSPEND, or ERASE SUSPEND commands and outputs status register
data on the falling edge of F_OE# or F_CE#, whichever occurs last.
command resumes the operation.
During the array mode, array data is output on the data bus.
If the previous command was PROTECTION CONFIGURATION SETUP,
the CSM latches the address and locks the block indicated on the
address bus.
If the previous command was PROTECTION CONFIGURATION SETUP,
the CSM latches the address and locks down the block indicated on
the address bus.
If the previous command was PROTECTION CONFIGURATION SETUP,
the CSM latches the address and unlocks the block indicated on the
address bus. If the block had been previously set to lock down, this
operation has no effect.
Unassigned command that should not be used.
Table 5
13
256K x 16 SRAM COMBO MEMORY
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DESCRIPTION
2 MEG x 16 PAGE FLASH
©2002, Micron Technology, Inc.