MT28C3214P2 Micron Semiconductor Products, Inc., MT28C3214P2 Datasheet - Page 2

• Manufacturer Part Number: MT28C3214P2
• Description: 2 Meg X 16 Page Flash, 256K X 16 SRAM Combo Memory, 66-ball Fbga
• Manufacturer: Micron Semiconductor Products, Inc.

GENERAL DESCRIPTION
bination Flash and SRAM memory devices provide a
compact, low-power solution for systems where PCB
real estate is at a premium. The dual-bank Flash is a
high-performance, high-density, nonvolatile memory
device with a revolutionary architecture that can sig-
nificantly improve system performance.
by configuring soft protection registers with dedicated
command sequences. For security purposes, dual 64-
bit chip protection registers are provided.
functions are fully automated by an on-chip write state
machine (WSM). The WSM simplifies these operations
and relieves the system processor of secondary tasks.
An on-chip status register, one for each bank, can be
used to monitor the WSM status to determine the
progress of a PROGRAM/ERASE command.
compatibility with existing EEPROM emulation soft-
ware packages.
source for the Flash device (F_V
power source for the SRAM device (S_V
1.65V–1.95V or 1.80V–2.20V for optimized power con-
sumption and improved noise immunity. The
MT28C3214P2FL and MT28C3214P2NFL devices sup-
port two V
in-circuit voltage of 0.9V–2.2V (MT28C3214P2FL) or
0.0V–2.2V (MT28C3214P2NFL). V
compatibility voltage of 12V ±5%. The 12V ±5% V
supported for a maximum of 100 cycles and 10 cumula-
tive hours. See Table 1.
2 Meg x 16 Page Flash 256K x 16 SRAM Combo Memory
MT28C3214P2FL_4.p65 – Rev. 4, Pub. 4/02
The MT28C3214P2FL and MT28C3214P2NFL com-
This new architecture features:
• A two-memory-bank configuration supporting
• A high-performance bus interface providing a fast
• A conventional asynchronous bus interface.
The device also provides soft protection for blocks
The embedded WORD WRITE and BLOCK ERASE
The erase/program suspend functionality allows
The device takes advantage of a dedicated power
dual-bank burst operation;
page data transfer; and
PP
voltage ranges, V
PART NUMBER
MT28C3214P2FL-10 BET
MT28C3214P2FL-10 TET
MT28C3214P2FL-11 BET
MT28C3214P2FL-11 TET
MT28C3214P2NFL-11 TET
Cross Reference for Abbreviated Device Marks
PP
1
PP
CC
and V
2
) and a dedicated
is the production
PP
CC
2
. V
), both at
PP
1
MARKING
PRODUCT
is an
PP
FW420
FW421
FW437
FW431
FW439
2
Table 2
is
256K x 16 SRAM COMBO MEMORY
2
vices contain an asynchronous 4Mb SRAM organized
as 256K-words by 16 bits. These devices are fabricated
using an advanced CMOS process and high-speed/
ultra-low-power circuit technology.
vices are packaged in a 66-ball FBGA package with
0.80mm pitch.
DEVICE MARKING
part number is not printed on the top of each device.
Instead, an abbreviated device mark comprised of a
five-digit alphanumeric code is used. The abbreviated
device marks are cross referenced to Micron part num-
bers in Table 2.
ARCHITECTURE AND MEMORY
ORGANIZATION
memory banks (bank a and bank b) for simultaneous
READ and WRITE operations. Bank a is 4Mb deep and
contains 8 x 4K-word parameter blocks and seven 32K-
word blocks. Bank b is 28Mb deep, is equally sectored,
and contains fifty-six 32K-word blocks.
organizations.
MARKING
DEVICE
MT28C3214P2FL
MT28C3214P2NFL
SAMPLE
FX420
FX421
FX437
FX431
FX439
The MT28C3214P2FL and MT28C3214P2NFL de-
The MT28C3214P2FL and MT28C3214P2NFL de-
Due to the size of the package, Micron’s standard
The Flash memory device contains two separate
Figures 2 and 3 show the top and bottom memory
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2 MEG x 16 PAGE FLASH
SAMPLE MARKING
V
PP
MECHANICAL
Voltage Ranges
FY420
FY421
FY437
FY431
FY439
Table 1
0.9V–2.2V
0.0V–2.2V
VOLTAGE RANGE
V
PP 1
©2002, Micron Technology, Inc.
11.4V–12.6V
11.4V–12.6V
V
PP 2