MT28C3214P2 Micron Semiconductor Products, Inc., MT28C3214P2 Datasheet - Page 6
MT28C3214P2
Manufacturer Part Number
MT28C3214P2
Description
2 Meg X 16 Page Flash, 256K X 16 SRAM Combo Memory, 66-ball Fbga
Manufacturer
Micron Semiconductor Products, Inc.
Datasheet
1.MT28C3214P2.pdf
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BALL DESCRIPTIONS (continued)
2 Meg x 16 Page Flash 256K x 16 SRAM Combo Memory
MT28C3214P2FL_4.p65 – Rev. 4, Pub. 4/02
66-BALL FBGA
H2, H10, H11,
A1, A2, A11,
A12, C4, H1,
NUMBERS
D10, H3
A9, H8
A10
H12
D9
D3
E4
SYMBOL
F_V
F_V
F_V
S_V
S_V
V
NC
CC
Q
CC
CC
PP
SS
SS
Supply
Supply
Supply
Supply
Supply
Supply
Input/
TYPE
–
Flash Program/Erase Power Supply: [0.9V–2.2V or 11.4V–12.6V].
Operates as input at logic levels to control complete device protection.
Provides backward compatibility for factory programming when driven
to 11.4V–12.6V. A lower F_V
the MT28C3214P2NFL device.
Flash Power Supply: [1.65V–1.95V or 1.80V–2.20V]. Supplies power for
device operation.
Flash Specific Ground: Do not float any ground pin.
SRAM Power Supply: [1.65V–1.95V or 1.80V–2.20V]. Supplies power for
device operation.
SRAM Specific Ground: Do not float any ground pin.
I/O Power Supply: [1.65–1.95V or 1.80V–2.20V]. This input should be tied
directly to V
No Connect: Lead is not internally connected; it may be driven or
floated.
CC
.
256K x 16 SRAM COMBO MEMORY
6
PP
DESCRIPTION
Micron Technology, Inc., reserves the right to change products or specifications without notice.
voltage range (0.0V–2.2V) is available on
2 MEG x 16 PAGE FLASH
©2002, Micron Technology, Inc.
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