SI9424 Fairchild Semiconductor, SI9424 Datasheet - Page 4
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SI9424
Manufacturer Part Number
SI9424
Description
Single P-Channel 2.5V Specified PowerTrench MOSFET
Manufacturer
Fairchild Semiconductor
Datasheet
1.SI9424.pdf
(5 pages)
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Typical Characteristics
0.01
100
0.1
10
5
4
3
2
1
0
1
Figure 9. Maximum Safe Operating Area.
0.1
Figure 7. Gate Charge Characteristics.
0
I
R
D
= -8.0A
SINGLE PULSE
DS(ON)
R
0.005
0.002
0.001
V
0.05
0.02
0.01
JA
T
GS
0.5
0.2
0.1
0.0001
= 125
A
1
= 25
= -4.5V
LIMIT
5
o
o
D = 0.5
C/W
C
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
0.2
Qg, GATE CHARGE (nC)
1
0.1
0.05
DC
10
0.02
10s
0.001
0.01
1s
Single Pulse
100ms
Figure 11. Transient Thermal Response Curve.
V
DS
15
= -5V
10ms
(continued)
10
Thermal characterization performed using the conditions described in Note 1c.
Transient themal response will change depending on the circuit board design.
-15V
100 s
0.01
-10V
20
100
25
0.1
t , TIME (sec)
1
3500
3000
2500
2000
1500
1000
50
40
30
20
10
0
500
0.001
0
Figure 8. Capacitance Characteristics.
0
Figure 10. Single Pulse Maximum
1
0.01
4
-V
Power Dissipation.
DS
, DRAIN TO SOURCE VOLTAGE (V)
SINGLE PULSE TIME (SEC)
0.1
P(pk)
10
8
T - T
R
Duty Cycle, D = t /t
J
C
C
C
iss
R
1
JA
oss
rss
t
1
A
(t) = r(t) * R
JA
t
= P * R
2
= 125°C/W
12
10
JA
100
1
SINGLE PULSE
R
T
(t)
JA
2
A
JA
=25
=125
16
o
100
C
f= 1 MHz
V
300
o
GS
C/W
= 0V
Si9424DY Rev.A
1000
20