SI9424 Fairchild Semiconductor, SI9424 Datasheet
SI9424
Manufacturer Part Number
SI9424
Description
Single P-Channel 2.5V Specified PowerTrench MOSFET
Manufacturer
Fairchild Semiconductor
Datasheet
1.SI9424.pdf
(5 pages)
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2001 Fairchild Semiconductor International
Si9424DY
Single P-Channel 2.5V Specified PowerTrench MOSFET
General Description
This P-Channel 2.5V specified MOSFET is produced
using
PowerTrench process that has been especially tailored
to minimize on-state resistance and yet maintain superior
switching performance.
These devices are well suited for low voltage and battery
powered applications where low in-line power loss and
fast switching are required.
Applications
•
•
•
Absolute Maximum Ratings
V
V
I
P
T
Thermal Characteristics
R
R
Package Outlines and Ordering Information
Symbol
D
J
DSS
GSS
D
DC/DC converter
Load switch
Battery Protection
, T
JA
JC
Device Marking
stg
Fairchild
9424
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
D
D
SO-8
Semiconductor's
D
S
- Continuous
- Pulsed
S
Si9424DY
S
Parameter
Device
G
advanced
T
A
= 25°C unless otherwise noted
Reel Size
13’’
Features
•
•
•
•
•
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
(Note 1a)
(Note 1)
High performance trench technology for extremely
-8.0 A, -20 V. R
Low gate charge (23nC typical).
Fast switching speed.
High power and current handling capability.
low R
DS(ON)
.
8
5
6
7
R
Tape Width
DS(on)
DS(on)
12mm
-55 to +150
Ratings
= 0.024
= 0.032
-8.0
-20
-50
2.5
1.2
±10
50
25
1
@ V
@ V
January 2001
1
4
3
2
2500 units
GS
GS
Quantity
= -4.5 V
= -2.5 V.
Units
C/W
C/W
W
V
V
A
Si9424DY Rev.A
C
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Datasheet:
SI9424 Summary of contents
Page 1
... A Parameter (Note 1a) (Note 1a) (Note 1b) (Note 1c) (Note 1a) (Note 1) Device Reel Size 13’’ January 2001 = 0.024 @ V = -4.5 V DS(on 0.032 @ V = -2.5 V. DS(on Ratings Units -20 V ±10 V -8.0 A -50 2.5 W 1.2 1 -55 to +150 C 50 C/W 25 C/W Tape Width Quantity 12mm 2500 units Si9424DY Rev.A ...
Page 2
... V -24 mV 100 nA -100 nA -0.4 -0.8 -1 mV/ C 0.019 0.024 0.026 0.039 0.027 0.032 - 2260 pF 500 pF 205 135 5 -2.1 A -0.75 -1 125 C/W when 2 mounted on a 0.003 in 2 pad of 2 oz. copper. Si9424DY Rev.A ...
Page 3
... Figure 6. Body Diode Forward Voltage Variation with Source Current V = -2.5V GS -3.0V -3.5V -4. DRAIN CURRENT ( - 125 2.5 3 3 GATE TO SOURCE VOLTAGE ( =125 -55 C 0.2 0.4 0.6 0 BODY DIODE VOLTAGE (V) SD and Temperature. Si9424DY Rev 1.2 ...
Page 4
... DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE o R =125 100 1000 SINGLE PULSE TIME (SEC) Power Dissipation. R ( 125°C/W JA P(pk ( Duty Cycle 100 300 Si9424DY Rev.A ...
Page 5
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FASTr™ Bottomless™ GlobalOptoisolator™ CoolFET™ GTO™ CROSSVOLT™ HiSeC™ DOME™ ...