MB81ES171625 Fujitsu Media Devices Limited, MB81ES171625 Datasheet - Page 40

• Manufacturer Part Number: MB81ES171625
• Description: SINGLE DATA RATE I/F FCRAM Consumer/Embedded Application Specific Memory for SiP
• Manufacturer: Fujitsu Media Devices Limited

40
MB81ES171625/173225-15-X
14.
15.
*: The Next command should be issued after (BL
Notes:
*1: All banks should be precharged prior to the first Auto-refresh command (REF) .
*2: Either NOP or DESL command should be asserted within t
*3: Any activation command such as ACTV or MRS commands other than REF command should be asserted
Note: Bank select is ignored at the REF command. The refresh address and bank select are selected by
CLK
Command
BA
WRITE with Auto
Auto
DQM
CLK
Command
DQ
after t
-
the internal refresh counter.
Refresh Timing
If the final data is masked by DQM, the precharge does not start at the clock of the final data input.
Once the auto precharge command is asserted, no new command within the same bank can be
The Auto-precharge command can not be invoked at full column burst operation.
REFC
issued.
from the last REF command.
ACTV
REF *
H or L
-
Precharge
1
NOP *
(
Example @ CL
2
WRITA
D1
t
REFC
NOP *
(Min)
2
D2
NOP or DESL
1)
2
,
BL
NOP *
(BL
t
DAL
t
DAL
2 Applied to same bank
2
from WRITA command.
1)
(Min)
REFC
t
DAL
period while Auto-refresh mode.
*
H or L
REF
ACTV
t
REFC
NOP *
(Min)
)
2
Command *
BA
3