BUW12AW NXP Semiconductors, BUW12AW Datasheet - Page 8

• Manufacturer Part Number: BUW12AW
• Description: Silicon Diffused Power Transistors
• Manufacturer: NXP Semiconductors

Philips Semiconductors
1997 Aug 14
handbook, halfpage
handbook, halfpage
Silicon diffused power transistors
V CEsat
(1) I
(2) I
(3) I
T
Fig.9
V
The values of R
I
Bon
j
CC
(V)
= 25 C; solid line: typical values; dotted line: maximum values.
10
requirements.
= 250 V; t
C
C
C
10
1
10
1
= 3 A.
= 6 A.
= 8 A.
V IM
Collector-emitter saturation voltage as a
function of base current.
2
Fig.11 Test circuit resistive load.
0
p
B
= 20 s; V
t p
and R
T
L
10
are selected in accordance with I
IM
1
= 6 to +8 V; t
(1)
R B
(2) (3)
1
R L
p
/T = 0.01.
V CC
D.U.T.
I B (A)
MGE244
MGB872
Con
10
and
7
handbook, halfpage
handbook, halfpage
h FE
10
10
1
10
Fig.12 Switching time waveforms with
2
Fig.10 DC current gain; typical values.
I B
I C
90%
10%
90%
10%
2
resistive load.
10
BUW12W; BUW12AW
t r
t on
1
V CE = 5 V
1
1V
Product specification
t s
t off
10
I B on
t f
I C (A)
MBC096
I C on
I B off
MBB730
10
t
t
2