BUW12AW NXP Semiconductors, BUW12AW Datasheet - Page 5

no-image

BUW12AW

Manufacturer Part Number
BUW12AW
Description
Silicon Diffused Power Transistors
Manufacturer
NXP Semiconductors
Datasheet
Philips Semiconductors
1997 Aug 14
handbook, full pagewidth
Silicon diffused power transistors
T
I - Region of permissible DC operation.
II - Permissible extension for repetitive pulse operation.
III - Area of permissible operation during turn-on in single transistor converters, provided R
IV - Repetitive pulse operation in this region is permissible provided V
(1) P
(2) Second breakdown limits.
mb
tot max
25 C.
line.
10
10
10
(A)
I C
10
10
10
1
3
2
1
2
3
1
I CM max
I C max
10
Fig.2 Forward bias SOAR.
(1)
I
BE
BUW12W
BUW12AW
10
4
0 and t
(2)
2
II
p
2 ms.
DC
III
IV
BE
10
100
3
V CE (V)
and t
BUW12W; BUW12AW
MGB927
p
0.6 s.
10
4
Product specification

Related parts for BUW12AW