BUW12AW NXP Semiconductors, BUW12AW Datasheet - Page 3

• Manufacturer Part Number: BUW12AW
• Description: Silicon Diffused Power Transistors
• Manufacturer: NXP Semiconductors

Philips Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
CHARACTERISTICS
T
1997 Aug 14
V
V
I
I
I
I
P
T
T
V
V
V
I
I
h
SYMBOL
SYMBOL
C
CM
B
BM
j
CES
EBO
FE
stg
j
CESM
CEO
tot
= 25 C unless otherwise specified.
CEOsust
CEsat
BEsat
Silicon diffused power transistors
collector-emitter peak voltage
collector-emitter voltage
collector current (DC)
collector current (peak value)
base current (DC)
base current (peak value)
total power dissipation
storage temperature
junction temperature
collector-emitter sustaining voltage I
collector-emitter saturation voltage
base-emitter saturation voltage
collector-emitter cut-off current
emitter-base cut-off current
DC current gain
BUW12W
BUW12AW
BUW12W
BUW12AW
BUW12W
BUW12AW
BUW12W
BUW12AW
BUW12W
BUW12AW
PARAMETER
PARAMETER
V
open base
see Figs 2 and 4
t
t
T
L = 25 mH; see Figs 5 and 6
I
see Figs 7 and 9
I
see Figs 7 and 9
I
I
V
note 1
V
T
V
V
see Fig.10
V
p
p
C
C
C
C
C
mb
j
BE
CE
CE
EB
CE
CE
< 2 ms; see Fig.2
= 125 C; note 1
= 100 mA; I
= 6 A; I
= 5 A; I
= 6 A; I
= 5 A; I
2 ms
= 0
= V
= V
= 9 V; I
= 5 V; I
= 5 V; I
25 C; see Fig.3
CESMmax
CESMmax
CONDITIONS
CONDITIONS
2
B
B
B
B
= 1.2 A;
= 1 A;
= 1.2 A; see Fig.7
= 1 A; see Fig.7
C
C
C
= 0
= 10 mA;
= 1 A; see Fig.10
Boff
; V
; V
= 0;
BE
BE
= 0;
= 0;
BUW12W; BUW12AW
400
450
10
10
MIN.
65
MIN.
18
20
TYP.
850
1000
400
450
8
20
4
6
125
+150
150
MAX.
Product specification
1.5
1.5
1.5
1.5
1
3
10
35
35
MAX.
V
V
V
V
A
A
A
A
W
C
C
UNIT
V
V
V
V
V
V
mA
mA
mA
UNIT