BUW12AW NXP Semiconductors, BUW12AW Datasheet - Page 7

• Manufacturer Part Number: BUW12AW
• Description: Silicon Diffused Power Transistors
• Manufacturer: NXP Semiconductors

Philips Semiconductors
1997 Aug 14
handbook, full pagewidth
handbook, full pagewidth
Silicon diffused power transistors
V BEsat
V CEsat
I
T
(1) I
C
V BE
j
/I
(V)
(V)
= 25 C.
B
Fig.7 Base-emitter and collector-emitter saturation voltages as functions of collector current; typical values.
1.6
1.4
1.2
1.0
0.8
2.0
1.5
1.0
0.5
= 5.
C
0
10
= 8 A.
0
1
(1) V
(2) V
(2) I
(3) I
BE
BE
; T
; T
C
C
j
j
Fig.8 Base-emitter voltage as a function of base current; typical values.
= 6 A.
= 3 A.
= 25 C.
= 100 C.
0.5
(3) V
(4) V
CE
CE
1
1
; T
; T
j
j
= 100 C.
= 25 C.
(1)
(2)
(3)
(4)
(1)
(2)
(3)
1.5
6
10
2
BUW12W; BUW12AW
2.5
I C (A)
Product specification
I B (A)
MGB911
MGB914
10
3
2