BUW12AW NXP Semiconductors, BUW12AW Datasheet - Page 2

• Manufacturer Part Number: BUW12AW
• Description: Silicon Diffused Power Transistors
• Manufacturer: NXP Semiconductors

Philips Semiconductors
DESCRIPTION
High-voltage, high-speed,
glass-passivated NPN power
transistor in a SOT429 package.
APPLICATIONS
PINNING
QUICK REFERENCE DATA
THERMAL CHARACTERISTICS
1997 Aug 14
V
V
V
I
I
P
t
R
C
CM
f
SYMBOL
SYMBOL
Converters
Inverters
Switching regulators
Motor control systems.
CESM
CEO
CEsat
tot
Silicon diffused power transistors
th j-mb
PIN
1
2
3
base
collector; connected to
mounting base
emitter
collector-emitter peak voltage
collector-emitter voltage
collector-emitter saturation voltage
collector current (DC)
collector current (peak value)
total power dissipation
fall time
thermal resistance from junction to mounting base
BUW12W
BUW12AW
BUW12W
BUW12AW
DESCRIPTION
PARAMETER
PARAMETER
V
open base
see Figs 7 and 9
see Figs 2 and 4
see Fig 2
T
resistive load; see Figs 11 and 12
Fig.1 Simplified outline (SOT429) and symbol.
mb
BE
1
= 0
1
25 C; see Fig.3
2
CONDITIONS
3
MBK117
BUW12W; BUW12AW
MBB008
1
850
1000
400
450
1.5
8
20
125
0.8
VALUE
Product specification
MAX.
1
2
3
V
V
V
V
V
A
A
W
s
UNIT
UNIT
K/W