BUW12F NXP Semiconductors, BUW12F Datasheet - Page 9

• Manufacturer Part Number: BUW12F
• Description: Silicon Diffused Power Transistors
• Manufacturer: NXP Semiconductors

Philips Semiconductors
1997 Aug 14
handbook, halfpage
handbook, halfpage
Silicon diffused power transistors
V
The values of R
I
V
L
Bon
Fig.14 Test circuit inductive load and reverse
C
CC
CL
= 200 H.
requirements.
= up to 1000 V; V
= 250 V; t
V IM
V BE
I B
bias SOAR.
Fig.12 Test circuit resistive load.
0
p
B
= 20 s; V
t p
and R
T
CC
L
= 30 V; V
are selected in accordance with I
IM
= 6 to +8 V; t
L B
BE
R B
= 1 V to 5 V; L
L C
V CC
D.U.T.
R L
p
/T = 0.01.
V CC
D.U.T.
MGE244
B
= 1 H;
MGE246
V CL
Con
and
9
handbook, halfpage
handbook, halfpage
t
r
20 ns.
I B
I C
I B
I C
90%
10%
90%
10%
Fig.13 Switching time waveforms with
Fig.15 Switching time waveforms with
90%
10%
90%
10%
resistive load.
inductive load.
t r 30 ns
t r
t on
BUW12F; BUW12AF
t s
t s
t off
Product specification
I B on
t f
I B on
t f
I B off
I C on
MBB731
MGE238
I B off
I C on
t
t
t
t