BUW12F NXP Semiconductors, BUW12F Datasheet - Page 8

• Manufacturer Part Number: BUW12F
• Description: Silicon Diffused Power Transistors
• Manufacturer: NXP Semiconductors

handbook, halfpage
Philips Semiconductors
1997 Aug 14
handbook, halfpage
Silicon diffused power transistors
T
(1) I
(2) I
(3) I
Fig.10 Collector-emitter saturation voltage as a
j
V CEsat
= 25 C.
(V)
C
C
C
10
30 to 60 Hz
Fig.8
= 3 A.
= 6 A.
= 8 A.
10
1
10
1
function of base current.
2
Test circuit for collector-emitter
sustaining voltage.
6 V
10
300
1
(1)
L
(2) (3)
100 to 200
1
oscilloscope
1
horizontal
vertical
I B (A)
MGE252
MGB872
50 V
10
8
handbook, halfpage
handbook, halfpage
Fig.9
T
j
= 125 C.
(mA)
h FE
I C
100
250
200
10
10
0
1
10
Fig.11 DC current gain; typical values.
2
Oscilloscope display for collector-emitter
sustaining voltage.
2
10
1
BUW12F; BUW12AF
V CE = 5 V
1
1V
Product specification
V CEOsust
10
min
I C (A)
MBC096
V CE (V)
MGE239
10
2