BUW12F NXP Semiconductors, BUW12F Datasheet - Page 7

• Manufacturer Part Number: BUW12F
• Description: Silicon Diffused Power Transistors
• Manufacturer: NXP Semiconductors

Philips Semiconductors
1997 Aug 14
handbook, full pagewidth
handbook, full pagewidth
Silicon diffused power transistors
V BEsat
V CEsat
I
(1) V
T
(1) I
C
j
/I
(V)
= 25 C.
B
Fig.6 Base-emitter and collector-emitter saturation voltages as functions of collector current; typical values.
V BE
(V)
2.0
1.5
1.0
0.5
= 5.
C
BE
0
1.6
1.4
1.2
1.0
0.8
10
= 8 A.
; T
1
0
j
= 25 C.
(2) I
(3) I
C
C
Fig.7 Base-emitter voltage as a function of base current; typical values.
(2) V
(3) V
= 6 A.
= 3 A.
0.5
BE
CE
; T
; T
j
j
= 100 C.
= 100 C.
1
1
(4) V
(1)
(2)
(3)
(4)
CE
; T
j
= 25 C.
(1)
(2)
(3)
7
1.5
10
2
BUW12F; BUW12AF
I C (A)
2.5
Product specification
I B (A)
MGB914
MGB911
10
2
3