BUW12F NXP Semiconductors, BUW12F Datasheet - Page 2

• Manufacturer Part Number: BUW12F
• Description: Silicon Diffused Power Transistors
• Manufacturer: NXP Semiconductors

Philips Semiconductors
DESCRIPTION
High-voltage, high-speed,
glass-passivated NPN power
transistor in a SOT199 package.
APPLICATIONS
PINNING
QUICK REFERENCE DATA
1997 Aug 14
V
V
V
I
I
I
P
t
Csat
C
CM
f
SYMBOL
Converters
Inverters
Switching regulators
Motor control systems.
CESM
CEO
CEsat
tot
Silicon diffused power transistors
PIN
mb
1
2
3
base
collector
emitter
mounting base;
electrically isolated
collector-emitter peak voltage
collector-emitter voltage
collector-emitter saturation voltage
collector saturation current
collector current (DC)
collector current (peak value)
total power dissipation
fall time
DESCRIPTION
BUW12F
BUW12AF
BUW12F
BUW12AF
BUW12F
BUW12AF
PARAMETER
ook, halfpage
Front view
1
Fig.1 Simplified outline (SOT199) and symbol.
V
open base
see Figs 6 and 10
see Figs 2 and 5
see Fig 2
T
resistive load; see Figs 12 and 13 0.8
h
BE
2
2
= 0
25 C; see Fig.4
MSB012
CONDITIONS
3
handbook, halfpage
BUW12F; BUW12AF
850
1000
400
450
1.5
6
5
8
20
34
MBB008
Product specification
MAX.
1
2
3
V
V
V
V
V
A
A
A
A
W
s
UNIT