BUW12F NXP Semiconductors, BUW12F Datasheet - Page 4

• Manufacturer Part Number: BUW12F
• Description: Silicon Diffused Power Transistors
• Manufacturer: NXP Semiconductors

Philips Semiconductors
CHARACTERISTICS
T
Note
1. Measured with a half-sinewave voltage (curve tracer).
1997 Aug 14
V
V
V
I
I
h
Switching times resistive load (see Figs 12 and 13)
t
t
t
Switching times inductive load (see Figs 14 and 15)
t
t
SYMBOL
j
CES
EBO
on
s
f
s
f
FE
CEOsust
CEsat
BEsat
= 25 C unless otherwise specified.
Silicon diffused power transistors
collector-emitter sustaining voltage I
collector-emitter saturation voltage
base-emitter saturation voltage
collector-emitter cut-off current
emitter-base cut-off current
DC current gain
turn-on time
storage time
fall time
storage time
fall time
BUW12F
BUW12AF
BUW12F
BUW12AF
BUW12F
BUW12AF
BUW12F
BUW12AF
BUW12F
BUW12AF
BUW12F
BUW12AF
BUW12F
BUW12AF
BUW12F
BUW12AF
PARAMETER
see Figs 8 and 9
I
I
I
I
V
V
T
V
V
V
I
I
I
I
I
I
I
T
I
T
I
T
I
T
C
C
C
C
C
Con
Con
Con
Con
Con
Con
Con
Con
Con
Con
j
c
c
c
c
CE
CE
EB
CE
CE
= 125 C; note 1
= 100 mA; I
= 6 A; I
= 5 A; I
= 6 A; I
= 5 A; I
= 100 C
= 100 C
= 100 C
= 100 C
= 9 V; I
= 6 A; I
= 5 A; I
= 6 A; I
= 5 A; I
= 6 A; I
= 5 A; I
= 6 A; I
= 5 A; I
= 6 A; I
= 5 A; I
= V
= V
= 5 V; I
= 5 V; I
CESMmax
CESMmax
4
B
B
B
B
= 1.2 A; see Figs 6 and 10
= 1 A; see Figs 6 and 10
= 1.2 A; see Fig.6
= 1 A; see Fig.6
C
C
C
Bon
Bon
Bon
Bon
Bon
Bon
B
B
B
B
CONDITIONS
= 0
= 1.2 A; V
= 1 A; V
= 1.2 A; V
= 1 A; V
= 10 mA; see Fig.11
= 1 A; see Fig.11
Boff
= I
= I
= I
= I
= I
= I
; V
; V
= 0; L = 25 mH;
Boff
Boff
Boff
Boff
Boff
Boff
BE
BE
= 1.2 A
= 1 A
= 1.2 A
= 1 A
= 1.2 A
= 1 A
CL
CL
= 0; note 1
= 0;
CL
CL
= 300 V;
= 300 V;
= 250 V;
= 250 V;
BUW12F; BUW12AF
400
450
10
10
MIN.
18
20
1.9
1.9
200
200
TYP.
Product specification
1.5
1.5
1.5
1.5
1
3
10
35
35
1
1
4
4
0.8
0.8
2.5
2.5
300
300
MAX. UNIT
V
V
V
V
V
V
mA
mA
mA
ns
ns
s
s
s
s
s
s
s
s