BUW12F NXP Semiconductors, BUW12F Datasheet - Page 10
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BUW12F
Manufacturer Part Number
BUW12F
Description
Silicon Diffused Power Transistors
Manufacturer
NXP Semiconductors
Datasheet
1.BUW12F.pdf
(12 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Philips Semiconductors
PACKAGE OUTLINE
1997 Aug 14
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3 leads (in-line)
Silicon diffused power transistors
Note
1. Terminals in this zone are not tinned.
DIMENSIONS (mm are the original dimensions)
UNIT
mm
OUTLINE
VERSION
SOT199
5.2
4.8
A
3.4
3.0
A 1
1.2
1.0
b
D
L
2.1
1.9
b 1
IEC
m
b 1
0.6
0.5
c
1
21.5
20.5
D
e
15.3
14.7
JEDEC
2
E
E 1
e 1
E
P
7.8
6.8
REFERENCES
E 1
b
3
5.45
e
0
10.9
e 1
L 1
scale
EIAJ
q
10
w
5
M
16.5
15.7
L
10 mm
L 1
3.7
3.3
(1)
0.8
0.6
m
3.3
3.1
P
Q
A 1
2.1
1.9
A
Q
BUW12F; BUW12AF
c
PROJECTION
6.2
5.8
EUROPEAN
q
0.4
w
45
Product specification
ISSUE DATE
97-06-27
SOT199