HMP351U6MMP8C Hynix Semiconductor, HMP351U6MMP8C Datasheet - Page 11
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HMP351U6MMP8C
Manufacturer Part Number
HMP351U6MMP8C
Description
240pin Ddr2 Sdram Unbuffered Dimms Based On 2gb M Version
Manufacturer
Hynix Semiconductor
Datasheet
1.HMP351U6MMP8C.pdf
(21 pages)
OUTPUT BUFFER LEVELS
OUTPUT AC TEST CONDITIONS
Note :
1. The VDDQ of the device under test is referenced.
OUTPUT DC CURRENT DRIVE
Notes :
1.V
2. V
3. The dc value of V
4. The values of I
Rev. 0.1 / May 2008
V
drive current capability to ensure V
Symbol
Symbol
SSTL_18 receiver. The actual current values are derived by shifting the desired driver operating point along a 21 ohm
load line to define a convenient driver current for measurement.
DDQ
I
I
DDQ
DDQ
OH(dc)
OL(dc)
V
OTR
= 1.7 V; V
- 280 mV.
= 1.7 V; V
Output Minimum Source DC Current
Output Minimum Sink DC Current
Output Timing Measurement Reference Level
OH
OUT
OUT
(dc) and I
REF
= 1420 mV. (V
= 280 mV. V
applied to the receiving device is set to V
OL
(dc) are based on the conditions given in Notes 1 and 2. They are used to test device
OUT
Parameter
OUT
IH
Parameter
/I
min plus a noise margin and V
OL
- V
must be less than 21 ohm for values of V
DDQ
)/I
OH
must be less than 21 ohm for values of V
1240pin DDR2 SDRAM Unbuffered DIMMs
TT
IL
max minus a noise margin are delivered to an
SSTl_18
- 13.4
13.4
0.5 * V
SSTL_18
OUT
DDQ
between 0 V and 280 mV.
OUT
Units
between V
mA
mA
Units
V
DDQ
Notes
1, 3, 4
2, 3, 4
Notes
and
1
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