NDH831N Fairchild Semiconductor, NDH831N Datasheet - Page 5

• Manufacturer Part Number: NDH831N
• Description: N-channel Enhancement Mode Field Effect Transistor
• Manufacturer: Fairchild Semiconductor

Typical Electrical Characteristics
V
GS
3 0 0 0
2 0 0 0
1 0 0 0
Figure 9. Capacitance Characteristics.
5 0 0
3 0 0
2 0 0
1 0 0
Figure 7. Breakdown Voltage Variation with
1.12
1.08
1.04
0.96
0.92
0.1
1
-50
Figure 11. Switching Test Circuit
R
I
Temperature.
D
f = 1 MHz
V
GEN
0.2
= 250µA
GS
-25
= 0 V
V
DS
T
0
J
V
, DRAIN TO SOURCE VOLTAGE (V)
0.5
, JUNCTION TEMPERATURE (°C)
IN
G
25
1
D
50
S
V
DD
2
R
75
L
DUT
5
100
C iss
C oss
C rss
1 0
V
125
OUT
150
2 0
V
t
V
0 . 0 0 0 1
OUT
0.001
5
4
3
2
1
0
d(on)
IN
Figure 8. Body Diode Forward Voltage Variation
0.01
0
Figure 10. Gate Charge Characteristics.
0.1
3 0
1 0
1 0 %
5
1
I = 5.8A
Figure 12. Switching Waveforms
D
0
with Current and Temperature
V
GS
0.2
T = 125°C
= 0V
J
t
5
V
5 0 %
on
SD
1 0 %
, BODY DIODE FORWARD VOLTAGE (V)
0.4
Q
t
9 0 %
PULSE WIDTH
r
g
, GATE CHARGE (nC)
25°C
10
0.6
-55°C
t
d(off)
0.8
15
V
DS
5 0 %
= 5V
1
.
9 0 %
t
20
1 0 %
off
9 0 %
1.2
10V
NDH831N Rev. D
15V
INVERTED
t
f
1.4
25