NDH831N Fairchild Semiconductor, NDH831N Datasheet - Page 4

• Manufacturer Part Number: NDH831N
• Description: N-channel Enhancement Mode Field Effect Transistor
• Manufacturer: Fairchild Semiconductor

Typical Electrical Characteristics
Figure 3. On-Resistance Variation with
30
25
20
15
10
Figure 1. On-Region Characteristics.
Figure 5. Transfer Characteristics.
5
0
3 0
2 5
2 0
1 5
1 0
1.6
1.4
1.2
0.8
0.6
5
0
0
1
0
-50
V
Temperature.
DS
0.5
V
I = 5.8A
-25
= 5.0V
2.7
D
GS
V
3.0
0.5
3.5
GS
= 4.5V
=4.5V
V
1
GS
V
T , JUNCTION TEMPERATURE (°C)
0
DS
J
, GATE TO SOURCE VOLTAGE (V)
, DRAIN-SOURCE VOLTAGE (V)
1
1.5
25
2.5
T = -55°C
1.5
J
50
2
2.5
75
2
100
3
2.0
2.5
125°C
1.5
25°C
125
3.5
150
3
4
1.5
0.5
1.4
1.2
0.8
0.6
0.4
1.8
1.6
1.4
1.2
0.8
2
1
Figure 4. On-Resistance Variation with Drain
1
Figure 2. On-Resistance Variation with Gate
Figure 6. Gate Threshold Variation with
2
1
-50
0
0
V
GS
V
GS
Current and Temperature.
= 2.0V
Voltage and Drain Current.
Temperature.
-25
= 4.5 V
5
5
0
T , JUNCTION TEMPERATURE (°C)
J
1 0
10
I
I
D
D
2 .5
2 5
T = 125°C
, DRAIN CURRENT (A)
, DRAIN CURRENT (A)
J
2 .7
1 5
5 0
1 5
3 .0
25°C
7 5
3.5
-55°C
2 0
20
4 .0
1 0 0
I
V
D
DS
4 .5
= 250µA
= V
2 5
2 5
5.0
NDH831N Rev. D
1 2 5
GS
1 5 0
30
3 0