FGA70N33BTD Fairchild Semiconductor, FGA70N33BTD Datasheet - Page 5

• Manufacturer Part Number: FGA70N33BTD
• Description: 330v, 70a Pdp Igbt
• Manufacturer: Fairchild Semiconductor

FGA70N33BTD Rev. A
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. V
Figure 9. Gate charge Characteristics
Figure 11. Turn-on Characteristics vs.
200
100
20
16
12
15
12
10
8
4
0
9
6
3
0
1
0
0
0
Common Emitter
T
C
Gate Resistance
= 25
I
C
10
= 20A
o
C
4
Gate-Emitter Voltage, V
15
Gate Resistance, R
Gate Charge, Q
20
t
t
d(on)
r
V
40A
8
CC
= 100V
30
30
70A
Common Emitter
V
I
T
T
C
C
C
CC
12
= 20A
= 25
= 125
g
200V
= 200V, V
[nC]
Common Emitter
T
40
G
C
o
[ Ω ]
GE
C
= 125
o
C
45
[V]
GE
16
GE
o
50
C
= 15V
60
20
60
5
Figure 8. Capacitance Characteristics
10000
1000
Figure 10. SOA Characteristics
0.01
1000
100
500
100
Figure 12. Turn-off Characteristics vs.
100
0.1
10
10
10
1
0.1
1
0
Single Nonrepetitive
Pulse T C = 25 o C
Curves must be derated
linearly with increase
in temperature
Collector-Emitter Voltage, V
Collector-Emitter Voltage, V
Gate Resistance
Gate Resistance, R
15
1
C
C
C
oes
res
ies
30
10
Common Emitter
V
I
T
T
C
C
C
CC
t
t
= 20A
d(off)
Common Emitter
V
T
f
= 25
= 125
C
GE
G
= 200V, V
10
= 25
[ Ω ]
= 0V, f = 1MHz
o
CE
C
o
C
o
CE
45
[V]
C
[V]
100
GE
100
10ms
1ms
DC
10
= 15V
µ
µ
s
www.fairchildsemi.com
s
400
30
60