FGA70N33BTD Fairchild Semiconductor, FGA70N33BTD Datasheet - Page 2

• Manufacturer Part Number: FGA70N33BTD
• Description: 330v, 70a Pdp Igbt
• Manufacturer: Fairchild Semiconductor

FGA70N33BTD Rev. A
Package Marking and Ordering Information
Electrical Characteristics of the IGBT
Off Characteristics
BV
∆B
∆T
I
I
On Characteristics
V
V
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
t
t
t
t
Q
Q
Q
Device Marking
Symbol
CES
GES
d(on)
r
d(off)
f
d(on)
r
d(off)
f
GE(th)
CE(sat)
ies
oes
res
g
ge
gc
FGA70N33BTD
J
CES
VCES
/
Collector to Emitter Breakdown Voltage V
Temperature Coefficient of Breakdown
Voltage
Collector Cut-Off Current
G-E Leakage Current
G-E Threshold Voltage
Collector to Emitter Saturation Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Emitter Charge
Gate to Collector Charge
FGA70N33BTDTU
Parameter
Device
Package
TO-3P
V
V
V
I
I
I
I
I
T
V
f = 1MHz
V
R
Resistive Load, T
V
R
Resistive Load, T
V
V
C
C
C
C
C
C
GE
GE
CE
GE
CE
CC
CC
CE
GE
G
G
= 20A
= 40A
= 70A
= 70A
= 250µA, V
= 125
= 5Ω, V
= 5Ω, V
= 30V
= V
= 200V, I
= 0V, I
= 0V, I
= V
= 200V, I
= 200V, I
= 15V
Test Conditions
T
C
CES
GES
,
,
,
,
o
= 25°C unless otherwise noted
V
V
V
V
C
,
GE
GE
GE
GE
2
C
C
V
GE
GE
, V
, V
GE
= 250µA
= 250uA
C
C
C
CE
= 15V
= 15V,
= 15V, T
= 15V,
= 15V,
= 15V,
GE
CE
= 20A,
= 20A,
= 20A,
= 0V,
Packaging
= V
C
C
= 0V
= 0V
= 25
= 125
GE
Type
Tube
C
o
= 25
C
o
C
o
C
Qty per Tube
Min.
330
2.3
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30ea
Typ.
1380
17.5
140
198
268
0.3
3.3
1.1
1.4
1.7
1.8
6.8
60
13
26
46
13
28
48
49
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Max.
±400
250
4.3
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Max Qty
per Box
www.fairchildsemi.com
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Units
V/
µA
nA
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
ns
ns
ns
V
V
V
V
V
V
o
C