FGA120N30D Fairchild Semiconductor, FGA120N30D Datasheet - Page 2

• Manufacturer Part Number: FGA120N30D
• Description: Fga120n30d 300v Pdp Igbt
• Manufacturer: Fairchild Semiconductor

FGA120N30D Rev. B
Package Marking and Ordering Information
Electrical Characteristics of the IGBT
Off Characteristics
BV
∆BV
∆T
I
I
On Characteristics
V
V
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
E
E
E
t
t
t
t
E
E
E
Q
Q
Q
Device Marking
Symbol
CES
GES
d(on)
r
d(off)
f
d(on)
r
d(off)
f
GE(th)
CE(sat)
on
off
ts
on
off
ts
ies
oes
res
g
ge
gc
J
CES
FGA120N30D
CES
/
Collector-Emitter Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Collector Cut-Off Current
G-E Leakage Current
G-E Threshold Voltage
Collector to Emitter
Saturation Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
FGA120N30D
Parameter
Device
Package
TO-3P
V
V
V
T
V
f = 1MHz
V
R
Resistive Load, T
V
R
Resistive Load, T
V
V
I
V
I
I
I
C
C
C
C
C
GE
GE
CE
GE
CE
CC
CC
CE
GE
G
G
= 120A
= 25A
= 120A
= 250uA, V
= 125°C
= 8.7Ω, V
= 8.7Ω, V
= 30V
= V
= 200V, I
T
= 0V, I
= 0V, I
= V
= 200V, I
= 200V, I
= 15V
C
Test Conditions
= 25°C unless otherwise noted
CES
GES
2
,
,
V
,
,
V
C
C
V
V
GE
, V
, V
GE
GE
GE
= 250µA
= 250µA
GE
GE
C
C
C
GE
CE
= 15V
CE
Reel Size
= 15V,
= 25A,
= 25A,
= 25A,
= 15V
= 0V,
= 15V,
= 15V,
C
C
= 0V
= 0V
= V
= 25°C
= 125°C
--
GE
Tape Width
Min.
300
2.5
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Typ.
2310
0.17
0.56
0.73
0.18
1.08
360
100
270
100
130
280
105
180
120
0.6
4.0
1.1
1.9
2.0
0.9
30
30
15
60
--
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Max.
± 250
100
300
180
5.0
1.4
22
90
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Quantity
-
-
-
www.fairchildsemi.com
30
Units
V/°C
mJ
mJ
µA
nA
mJ
mJ
mJ
mJ
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
ns
ns
ns
V
V
V
V
V