FGA120N30D Fairchild Semiconductor, FGA120N30D Datasheet

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FGA120N30D

Manufacturer Part Number
FGA120N30D
Description
Fga120n30d 300v Pdp Igbt
Manufacturer
Fairchild Semiconductor
Datasheet

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Part Number:
FGA120N30D
Manufacturer:
FAIRCHILD
Quantity:
12 500
©2006 Fairchild Semiconductor Corporation
FGA120N30D Rev. B
FGA120N30D
300V PDP IGBT
Features
• High Current Capability
• Low saturation voltage: V
• High Input Impedance
Absolute Maximum Ratings
Notes:
(1) Repetitive test , pulse width = 100usec , Duty = 0.2
* Ic_pulse limited by max Tj
Thermal Characteristics
V
V
I
I
I
I
P
T
T
T
R
R
R
C
CM
F
FM
stg
J
L
CES
GES
D
Symbol
θJC
θJC
θJA
Symbol
(IGBT)
(DIODE)
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Thermal Resistance, Junction-to-Case for Diode
Thermal Resistance, Junction-to-Case for IGBT
Thermal Resistance, Junction-to-Ambient
G C E
CE(sat),
Typ = 1.1V@ I
Description
Parameter
(Note 1)
TO-3P
T
C
= 25°C unless otherwise noted
C
= 25A
@ T
@ T
@ T
@ T
@ T
C
C
C
C
C
= 25°C
= 25°C
= 100°C
= 25°C
= 100°C
1
Description
Employing Unified IGBT Technology, FGA120N30D provides
low conduction and switching loss. FGA120N30D offers the
optimum solution for PDP applications where low condution loss
is essential.
Typ.
FGA120N30D
--
--
--
G
G
-55 to +150
-55 to +150
± 30
300
120
300
290
116
300
10
40
Max.
0.43
1.56
40
C
C
E
E
www.fairchildsemi.com
Units
Units
°C/W
°C/W
°C/W
June 2006
°C
°C
°C
W
W
V
V
A
A
A
A

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FGA120N30D Summary of contents

Page 1

... R Thermal Resistance, Junction-to-Ambient θJA ©2006 Fairchild Semiconductor Corporation FGA120N30D Rev. B Description Employing Unified IGBT Technology, FGA120N30D provides low conduction and switching loss. FGA120N30D offers the = 25A C optimum solution for PDP applications where low condution loss is essential. TO- 25°C unless otherwise noted ...

Page 2

... E Turn-On Switching Loss on E Turn-Off Switching Loss off E Total Switching Loss ts Q Total Gate Charge g Q Gate-Emitter Charge ge Q Gate-Collector Charge gc FGA120N30D Rev. B Package Reel Size TO- 25°C unless otherwise noted C Test Conditions 250µ 0V 250µ ...

Page 3

... Electrical Characteristics of DIODE Symbol Parameter V Diode Forward Voltage FM t Diode Reverse Recovery Time rr I Diode Peak Reverse Recovery Cur- rr rent Q Diode Reverse Recovery Charge rr FGA120N30D Rev 25°C unless otherwise noted C Test Conditions I = 10A T = 25° 125° 10A T = 25° ...

Page 4

... 2 ase Te m pera ture , T FGA120N30D Rev. B Figure 2. Typical Output Characteristics 180 150 120 = [V] CE Figure 4. Transfer characteristics ...

Page 5

... Figure 11. Turn-On Characteristics vs. Gate Resistance 1000 tr 100 td(on Gate R esistance, R FGA120N30D Rev. B (Continued) Figure 8. Capacitance Charaacteristics GE 5000 itte 4000 3000 2000 1000 ...

Page 6

... sista Figure 17. Turn-Off SOA Figure 1000 Safe O perating Area 20V 100 100 Collector-Emitter Voltage, V FGA120N30D Rev. B (Continued) Figure 14.Turn-Off Characteristics vs. 1000 tr 100 td(on 100 120 [ Figure 16. Switching Loss vs off 0 Ω ...

Page 7

... Figure 19. Forward Characteristics 100 125 0.1 0.0 0.5 1.0 Forw ard Voltage , V Figure 21. Typical Reverse Recovery Time 100 di/dt [A/ FGA120N30D Rev. B (Continued) single pulse 1E-4 1E-3 0.01 Rectangular Pulse Duration [sec 125 100 1.5 2.0 2.5 [ 10A ...

Page 8

... Mechanical Dimensions ø3.20 ±0.10 2.00 ±0.20 3.00 ±0.20 1.00 ±0.20 5.45TYP [5.45 ] ±0.30 FGA120N30D Rev. B TO-3P 15.60 ±0.20 13.60 ±0.20 9.60 ±0.20 5.45TYP [5.45 ] ±0.30 8 4.80 ±0.20 +0.15 1.50 –0.05 1.40 ±0.20 +0.15 0.60 –0.05 www.fairchildsemi.com ...

Page 9

... PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary No Identification Needed Obsolete FGA120N30D Rev. B ISOPLANAR™ PowerEdge™ LittleFET™ PowerSaver™ MICROCOUPLER™ PowerTrench MicroFET™ QFET MicroPak™ ...

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