FGA180N30D Fairchild Semiconductor, FGA180N30D Datasheet - Page 5

• Manufacturer Part Number: FGA180N30D
• Description: Fga180n30d 300v Pdp Igbt
• Manufacturer: Fairchild Semiconductor

FGA180N30D Rev. B
Typical Performance Characteristics
Figure 7. Saturation Voltage vs.V
Figure 9. Gate Charge Characteristics
Figure 11. Turn-On Characteristics vs.
14
12
10
1000
6
5
4
3
2
1
0
15
100
8
6
4
2
0
10
0
0
Gate Resistance
C om m on Em itter
T
C om m on Em itter
R
T
0
C
C
L
= 125
= 5
= 25
Ω
Td(on)
o
o
C
tr
C
4
50
10
I
G ate-Em itter Voltage, V
C
= 20A
G ate Charge, Q
Gate Resistance, R
100
8
20
40A
90A
180A
150
12
Vcc = 200V
30
g
[nC ]
Com m on Em itter
V
I
T
T
C
CC
C
C
G
= 40A
= 25
= 125
G E
= 200V, V
[
Ω
GE
[V]
]
o
C
o
200
C
16
40
GE
= 15V
250
50
20
(Continued)
5
8000
6000
4000
2000
0.01
100
600
0.1
1000
2000
10
0
100
1
10
0.1
0.1
Figure 8. Capacitance Characteristics
Ic MAX (Continuous)
Figure 12. Turn Off Characteristics vs.
0
Ic MAX (Pulsed)
Single Nonrepetitive
Pulse Tc = 25
Curves must be derated
linearly with increase
in temperature
Comm on Emitter
V
I
T
T
Figure 10. SOA Characteristics
C
C
C
CC
= 40A
= 25
= 125
= 200V, V
Collector - Emitter Voltage, V
C ollector-Em itter Voltage, V
o
C oes
C res
C ies
C
o
10
C
1
o
C
GE
G ate Resistance, R
= 15V
Gate Resistance
1
20
DC Operation
10
30
1ms
G
C om m on Em itter
V
T
G E
C
[
100
CE
Ω
= 25
100
CE
= 0V, f = 1M H z
]
[V]
µ
[V]
10
s
o
C
40
50
Td(off)
µ
s
tf
1000
30
50
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