FGA180N30D Fairchild Semiconductor, FGA180N30D Datasheet
FGA180N30D
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FGA180N30D Summary of contents
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... Thermal Resistance, Junction-to-Ambient θJA ©2006 Fairchild Semiconductor Corporation FGA180N30D Rev. B Description Employing Unified IGBT Technology, FGA180N30D provides low conduction and switching loss. FGA180N30D offers the = 40A C optimum solution for PDP applications where low condution loss is essential. TO- 25oC unless otherwise noted ...
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... E Turn-On Switching Loss on E Turn-Off Switching Loss off E Total Switching Loss ts Q Total Gate Charge g Q Gate-Emitter Charge ge Q Gate-Collector Charge gc FGA180N30D Rev. B Package Reel Size TO- 25°C unless otherwise noted C Test Conditions 250µ 0V 250µ ...
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... Electrical Characteristics of DIODE Symbol Parameter V Diode Forward Voltage FM t Diode Reverse Recovery Time rr I Diode Peak Reverse Recovery Cur- rr rent Q Diode Reverse Recovery Charge rr FGA180N30D Rev 25°C unless otherwise noted C Test Conditions I = 10A T = 25° 125° 10A T = 25° ...
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... C ollector-Em itter Voltage, V Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level 3.0 Com itter V = 15V GE 2.5 2.0 1.5 1.0 0.5 0 Case Temperature, T FGA180N30D Rev. B Typical Saturation VoltageCharacteristics Figure 2. Typical Output Characteristics 300 125 C C 250 10V 200 150 100 ...
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... 100 G ate Charge, Q Figure 11. Turn-On Characteristics vs. Gate Resistance 1000 tr 100 Td(on Gate Resistance, R FGA180N30D Rev. B (Continued) Figure 8. Capacitance Characteristics GE 8000 6000 4000 180A 2000 600 Ic MAX (Pulsed) Ic MAX (Continuous) 100 10 Vcc = 200V 1 Single Nonrepetitive 0 ...
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... Figure 15. Switching Loss vs Gate Resistance 1 0 ate R esistance, R Figure 17. Turn Off SOA Characteristics 1000 100 10 Safe O perating Area V = 20V Collector-Emitter Voltage, V FGA180N30D Rev. B (Continued) Figure 14. Turn-Off Characteristics 1000 tr 100 Td(on) 10 100 120 140 160 180 [ Figure 16. Switching Loss vs E off ...
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... Figure 19. Forward Characteristics 100 125 0.1 0.0 0.5 1.0 Forw ard Voltage , V Figure 21. Typical Reverse Recovery Time 100 di/dt [A/ FGA180N30D Rev. B (Continued) Figure 18. Transient Thermal Impedance of IGBT single pulse 1E-4 1E-3 0.01 Rectangular Pulse Duration [sec ...
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... TO-3P Capacitance CharacteristicsTurn-On Characteristics vs. Gate ø3.20 ±0.10 2.00 ±0.20 3.00 ±0.20 1.00 ±0.20 5.45TYP [5.45 ] ±0.30 FGA180N30D Rev. B 15.60 ±0.20 13.60 ±0.20 9.60 ±0.20 5.45TYP [5.45 ] ±0.30 8 4.80 ±0.20 +0.15 1.50 –0.05 1.40 ±0.20 +0.15 0.60 –0.05 Dimensions in Millimeters www.fairchildsemi.com ...
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... PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary No Identification Needed Obsolete FGA180N30D Rev. B ISOPLANAR™ PowerEdge™ LittleFET™ PowerSaver™ MICROCOUPLER™ PowerTrench MicroFET™ QFET MicroPak™ ...