FGL40N150D Fairchild Semiconductor, FGL40N150D Datasheet - Page 4

• Manufacturer Part Number: FGL40N150D
• Description: Electrical Characteristics Of The Igbt
• Manufacturer: Fairchild Semiconductor

©2002 Fairchild Semiconductor Corporation
10000
Fig 7. Turn-Off Characteristics vs.
Fig 9. Switching Loss vs. Collector Current
Fig 11. Turn-On Characteristics vs.
1000
1000
1000
100
100
100
10
10
10
td(off)
tf
Eoff
Eon
Collector Current
Common Emitter
V
T
T
Common Emitter
V
T
T
Common Emitter
V
I
T
T
C
GE
C
C
G E
C
C
C
C
CC
Gate Resistance
= 40A
= 25
= 125
= 25
= 125
= 25
= 125
20
20
=  15V, R
=  15V, R
= 600V, V
10
o
o
o
o
o
o
C
C
C
C
C
C
30
30
GE
Gate Resistance, R
Collector Current, I
Collector Current, I
G
G
= 51
=  15V
= 51
40
40
50
50
60
60
C
C
G
[A]
[A]
[ ]
70
70
100
80
80
td(on)
tr
90
90
10000
Fig 10. Turn-Off Characteristics vs.
Fig 8. Turn-On Characteristics vs.
1000
Fig 12. Switching Loss vs. Gate Resistance
1000
1000
100
100
10
10
Collector Current
Common Emitter
V
T
T
Common Emitter
V
I
T
T
Common Emitter
V
I
T
T
C
C
C
C
GE
Gate Resistance
C
C
CC
C
C
CC
= 40A
= 40A
= 25
= 125
= 25
= 125
= 25
= 125
=  15V, R
20
= 600V, V
= 600V, V
td(off)
10
10
Eon
Eoff
tf
o
o
o
o
o
o
C
C
C
C
C
C
30
GE
Gate Resistance, R
GE
Collector Current, I
Gate Resistance, R
G
= 51
=  15V
=  15V
40
50
60
C
G
G
[A]
[ ]
[ ]
70
100
100
80
td(on)
FGL40N150D Rev. A1
tr
90