FGL40N150D Fairchild Semiconductor, FGL40N150D Datasheet
FGL40N150D
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FGL40N150D Summary of contents
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... FGL40N150D General Description Fairchild’s Insulated Gate Bipolar Transistor (IGBT) provides low conduction and switching losses. The FGL40N150D is designed for induction heating applications. Applications Home appliances, induction heaters, IH JAR, and microwave ovens Absolute Maximum Ratings Symbol V Collector-Emitter Voltage CES V Gate-Emitter Voltage ...
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... C unless otherwise noted C Test Conditions Min 10A 10A, di/dt = 200A/us F Typ. Max. Units -- -- 3 ± 100 nA 5.0 7.5 V 3.5 4 2450 -- pF -- 220 -- 100 200 ns -- 350 700 ns -- 200 400 ns -- 100 300 ns -- 110 170 Typ. Max. Units -- 1.3 1 170 300 ns FGL40N150D Rev. A1 ...
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... 125 Collector - Emitter Voltage, V [V] CE Common Emitter V =0V, f=1MHz GE o Tc=25 C Cies Coes Cres 10 Collector - Emitter Voltage, V [V] CE Common Emitter 125 C C 80A 40A 20A Gate - Emitter Voltage FGL40N150D Rev. A1 ...
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... Collector Current, I [A] C Common Emitter = 15V V = 600V 40A 125 td(off) 10 100 Gate Resistance Gate Resistance = 15V = 600V 40A 125 C C Eoff Eon 10 100 Gate Resistance FGL40N150D Rev ...
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... Fig 18. Typical Forward Voltage Drop 50 s 100 s 1ms DC Operation 100 1000 Collector - Emitter Voltage, V [V] CE di/dt = 50A/us 100A/us 200A/ Forward Current, I [A] F vs. Forward Current rr T =125 C 25 0.6 0.8 1.0 1.2 1.4 1.6 Instantaneous Voltage, V [V] F vs. Forward Current FGL40N150D Rev ...
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... Package Dimension 20.00 (8.30) (7.00) 4.90 0.20 (1.50) 2.50 0.20 5.45TYP [5.45 ] 0.30 ©2002 Fairchild Semiconductor Corporation TO-264 0.20 (8.30) (1.00) (0.50) (7.00) (1.50) 3.00 0.20 +0.25 1.00 –0.10 5.45TYP [5.45 ] 0.30 (2.00) (1.50) +0.25 0.60 2.80 –0.10 0.30 Dimensions in Millimeters FGL40N150D Rev. A1 ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ® ACEx™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ DenseTrench™ ...