FQD7P06 Fairchild Semiconductor, FQD7P06 Datasheet - Page 3

• Manufacturer Part Number: FQD7P06
• Description: These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology
• Manufacturer: Fairchild Semiconductor

©2001 Fairchild Semiconductor Corporation
Typical Characteristics
600
500
400
300
200
100
10
10
10
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-1
0
1
0
10
10
0
Figure 5. Capacitance Characteristics
-1
-1
Figure 3. On-Resistance Variation vs.
Top :
Bottom : - 4.5 V
Figure 1. On-Region Characteristics
Drain Current and Gate Voltage
- 15.0 V
- 10.0 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
V
GS
4
-V
V
DS
DS
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
-I
D
10
, Drain Current [A]
C
C
C
0
10
8
iss
oss
rss
V
0
GS
= - 20V
V
GS
12
= - 10V
C
C
C
iss
oss
rss
※ Notes :
= C
= C
= C
1. 250μ s Pulse Test
2. T
10
※ Note : T
gs
gd
ds
1
C
+ C
+ C
= 25℃
16
10
※ Notes :
gd
gd
1
1. V
2. f = 1 MHz
(C
J
ds
= 25℃
GS
= shorted)
= 0 V
20
10
10
10
10
10
10
12
10
8
6
4
2
0
-1
-1
1
0
1
0
0.0
0
2
Figure 6. Gate Charge Characteristics
Figure 4. Body Diode Forward Voltage
25℃
0.2
150℃
Figure 2. Transfer Characteristics
0.4
1
Variation vs. Source Current
150℃
0.6
4
-V
-V
0.8
2
Q
-55℃
SD
and Temperature
GS
G
, Source-Drain Voltage [V]
, Total Gate Charge [nC]
, Gate-Source Voltage [V]
25℃
1.0
1.2
3
V
DS
V
1.4
DS
= -48V
6
= -30V
1.6
4
1.8
2.0
※ Notes :
5
※ Notes :
1. V
2. 250μ s Pulse Test
1. V
2. 250μ s Pulse Test
※ Note : I
8
DS
2.2
GS
= -30V
= 0V
D
2.4
6
= -7.0 A
2.6
Rev. A2. May 2001
2.8
10
7