FQT13N06L Fairchild Semiconductor, FQT13N06L Datasheet - Page 3

• Manufacturer Part Number: FQT13N06L
• Manufacturer: Fairchild Semiconductor

©2001 Fairchild Semiconductor Corporation
Typical Characteristics
800
600
400
200
250
200
150
100
10
10
50
0
0
10
1
0
10
0
Figure 5. Capacitance Characteristics
-1
-1
Top :
Bottom : 3.0 V
Figure 3. On-Resistance Variation vs
Figure 1. On-Region Characteristics
Drain Current and Gate Voltage
10.0 V
8.0 V
6.0 V
5.0 V
4.5 V
4.0 V
3.5 V
V
V
GS
GS
V
= 10V
GS
= 5V
10
V
V
DS
DS
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
10
I
D
, Drain Current [A]
0
10
0
※ Notes :
1. 250μ s Pulse Test
2. T
20
C
= 25℃
C
C
C
iss
oss
C
C
C
rss
iss
oss
rss
10
= C
= C
= C
30
※ Note : T
1
gs
gd
ds
+ C
+ C
※ Notes :
1. V
2. F = 1 MHz
gd
gd
(C
GS
10
J
ds
= 25 ℃
= 0 V
= shorted)
1
40
10
10
10
10
10
10
12
10
-1
8
6
4
2
0
1
0
-1
1
0
0.2
0
0
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
150℃
25℃
Figure 2. Transfer Characteristics
Variation with Source Current
0.4
2
2
150℃
Q
V
V
and Temperature
G
GS
SD
-55℃
, Total Gate Charge [nC]
, Gate-Source Voltage [V]
, Source-Drain voltage [V]
V
DS
0.6
V
= 48V
4
4
DS
= 30V
25℃
0.8
6
6
※ Notes :
※ Notes :
1. V
2. 250μ s Pulse Test
1. V
2. 250μ s Pulse Test
※ Note : I
DS
GS
= 25V
= 0V
1.0
8
8
D
= 13.6A
Rev. A, May 2001
1.2
10
10