FQT13N06L Fairchild Semiconductor, FQT13N06L Datasheet
FQT13N06L
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FQT13N06L Summary of contents
Page 1
... C (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) = 25°C) C Parameter May 2001 QFET = 0. DS(on " " ! " ! " " " " " FQT13N06L Units 60 V 2.8 A 2. 2.8 A 0.21 mJ 7.0 V/ns 2.1 W 0.017 W/°C -55 to +150 °C 300 °C Typ Max Units -- 60 °C/W Rev ...
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... ≤ 13.6A, di/dt ≤ 300A ≤ DSS, 4. Pulse Test : Pulse width ≤ 300 s, Duty cycle ≤ Essentially independent of operating temperature ©2001 Fairchild Semiconductor Corporation T = 25°C unless otherwise noted C Test Conditions 250 250 A, Referenced to 25°C ...
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... Drain Current [A] D Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage 800 600 400 200 Drain-Source Voltage [V] DS Figure 5. Capacitance Characteristics ©2001 Fairchild Semiconductor Corporation 150℃ 25℃ Figure 2. Transfer Characteristics ※ Note : ℃ ...
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... V , Drain-Source Voltage [V] DS Figure 9. Maximum Safe Operating Area ©2001 Fairchild Semiconductor Corporation (Continued) 2.5 2.0 1.5 1.0 ※ Note : 0 250 μ 0.0 100 150 200 -100 o C] Figure 8 ...
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... Unclamped Inductive Switching Test Circuit & Waveform 10V 10V ©2001 Fairchild Semiconductor Corporation Gate Charge Test Circuit & Waveform Same Type Same Type as DUT as DUT DUT DUT ...
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... Peak Diode Recovery dv/dt Test Circuit & Waveform Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) ©2001 Fairchild Semiconductor Corporation DUT DUT + + Driver Driver Same Type Same Type ...
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... Package Dimensions 3.00 2.30 TYP (0.95) 4.60 6.50 ©2001 Fairchild Semiconductor Corporation SOT-223 0.10 MAX1.80 0.70 0.10 (0.95) 0.25 0.25 0.20 +0.04 0.06 –0.02 +0.10 –0.05 Rev. A, May 2001 ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ DenseTrench™ GTO™ ...