FQD2N100 Fairchild Semiconductor, FQD2N100 Datasheet - Page 4

• Manufacturer Part Number: FQD2N100
• Manufacturer: Fairchild Semiconductor

©2009 Fairchild Semiconductor Corporation
Typical Characteristics
1.2
1.1
1.0
0.9
0.8
10
10
10
10
-100
-1
-2
Figure 9. Maximum Safe Operating Area
1
0
10
Figure 7. Breakdown Voltage Variation
0
-50
T
V
vs. Temperature
J
DS
, Junction Temperature [
10
0
, Drain-Source Voltage [V]
1
※ Notes :
1 0
1 0
1 0
1. T
2. T
3. Single Pulse
Operation in This Area
is Limited by R
- 1
- 2
0
1 0
C
J
= 150
= 25
- 5
D = 0 .5
o
C
50
o
C
0 .0 5
0 .0 2
0 .0 1
0 .1
0 .2
(Continued)
DS(on)
Figure 11. Transient Thermal Response Curve
10
DC
100
2
1 0
s i n g le p u ls e
o
10 ms
C]
- 4
※ Notes :
1. V
2. I
t
1 ms
1
D
, S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
G S
= 250 A
= 0 V
150
100 s
1 0
10 s
10
3
- 3
200
1 0
- 2
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.8
1.5
1.2
0.9
0.6
0.3
0.0
-100
25
Figure 8. On-Resistance Variation
※ N o te s :
Figure 10. Maximum Drain Current
1 0
1 . Z
2 . D u ty F a c to r , D = t
3 . T
- 1
P
-50
DM
θ J C
J M
50
- T
( t) = 2 .5 ℃ /W M a x .
vs. Case Temperature
C
= P
T
vs. Temperature
t
J
T
1
, Junction Temperature [
C
0
t
D M
1 0
, Case Temperature [ ℃ ]
2
* Z
0
75
1
/t
θ J C
2
( t)
50
100
1 0
1
100
o
C]
125
※ Notes :
1. V
2. I
150
D
GS
= 0.8 A
= 10 V
Rev. A2, January 2009
150
200