FQD2N100 Fairchild Semiconductor, FQD2N100 Datasheet - Page 3

• Manufacturer Part Number: FQD2N100
• Manufacturer: Fairchild Semiconductor

©2009 Fairchild Semiconductor Corporation
Typical Characteristics
10
10
700
600
500
400
300
200
100
10
20
15
10
-1
-2
0
0
5
0
10
10
0
-1
Figure 5. Capacitance Characteristics
-1
Top :
Bottom :
Figure 3. On-Resistance Variation vs.
Figure 1. On-Region Characteristics
Drain Current and Gate Voltage
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
V
GS
1
V
V
DS
DS
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
I
D
10
10
, Drain Current [A]
0
0
V
C
GS
C
C
oss
iss
rss
= 10V
2
C
C
C
iss
oss
rss
※ Notes :
= C
= C
= C
※ Note : T
1. 250 s Pulse Test
2. T
V
10
10
3
gs
GS
ds
gd
1
1
+ C
C
+ C
= 25℃
= 20V
gd
gd
※ Notes :
(C
1. V
2. f = 1 MHz
J
ds
= 25℃
= shorted)
GS
= 0 V
4
10
10
10
10
12
10
-1
-1
0
0
8
6
4
2
0
0.2
2
0
Figure 6. Gate Charge Characteristics
Figure 4. Body Diode Forward Voltage
Figure 2. Transfer Characteristics
Variation vs. Source Current and
2
0.4
4
25℃
150℃
150℃
V
V
4
Q
GS
SD
0.6
G
, Gate-Source Voltage [V]
, Source-Drain Voltage [V]
, Total Gate Charge [nC]
V
V
V
Temperature
DS
DS
DS
= 200V
= 500V
= 1000V
25℃
6
0.8
6
-55℃
8
1.0
※ Notes :
※ Notes :
10
1. V
2. 250 s Pulse Test
1. V
2. 250 s Pulse Test
※ Note : I
8
DS
GS
= 50V
= 0V
1.2
D
12
= 1.6 A
Rev. A2, January 2009
1.4
14
10