IRFM120A Fairchild Semiconductor, IRFM120A Datasheet - Page 2

• Manufacturer Part Number: IRFM120A
• Manufacturer: Fairchild Semiconductor

IRFM120A
.BV/.T
Electrical Characteristics
Symbol
Source-Drain Diode Ratings and Characteristics
Symbol
Notes ;
& Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
' L=35mH, I
( I
+ Pulse Test : Pulse Width = 250#s, Duty Cycle * 2%
, Essentially Independent of Operating Temperature
- Adjusted for Cisco
R
BV
V
t
t
V
C
I
I
C
C
Q
Q
I
Q
GS(th)
DS(on)
d(on)
d(off)
GSS
DSS
g
Q
I
t
SM
t
t
SD
oss
S
rr
SD
DSS
iss
rss
fs
r
f
gs
gd
rr
g
*9.2A, di/dt*300A/#s, V
J
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Drain-to-Source Leakage Current
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain(“Miller”) Charge
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
AS
=2.3A, V
Characteristic
Characteristic
DD
=25V, R
DD
*BV
G
=27
DSS
)
(T
, Starting T
, Starting T
A
=25% unless otherwise specified)
+
&
J
J
=25%
Min.
Min.
=25%
100
2.0
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
Typ.
0.12
Typ.
3.12
0.34
370
2.7
7.8
98
95
38
14
14
36
28
16
--
--
--
--
--
--
--
--
--
--
--
Max. Units
Max. Units
-100
100
100
480
110
0.2
2.3
1.5
4.0
10
18
45
40
40
90
70
22
--
--
--
--
--
--
--
1
V/%
#A
#C
nA
nC
pF
ns
ns
)
S
V
V
A
V
V
I
V
V
V
V
V
V
V
V
V
V
R
V
I
See Fig 6 & Fig 12
Integral reverse pn-diode
in the MOSFET
T
T
di
D
D
J
J
GS
DS
GS
GS
DS
DS
DS
GS
DS
GS
DD
G
DS
=250#A
=9.2A
F
=25%,I
=25%,I
/dt=100A/#s
=18)
=0V,I
=5V,I
=20V
=-20V
=30V
=100V
=80V,T
=10V,I
=40V,I
=0V,V
=50V,I
=80V,V
See Fig 13
Test Condition
Test Condition
See Fig 5
POWER MOSFET
D
D
S
F
DS
=250#A
=250#A
D
D
D
=2.3A,V
=9.2A
N-CHANNEL
A
GS
=1.15A
=1.15A
=9.2A,
=125%
=25V,f =1MHz
=10V,
See Fig 7
GS
=0V
+ ,
+ ,
+
+
+
-