IRFM120A Fairchild Semiconductor, IRFM120A Datasheet
IRFM120A
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IRFM120A Summary of contents
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... Purposes, 1/8” from case for 5-seconds Thermal Resistance Symbol R Junction-to-Ambient $JA * When mounted on the minimum pad size recommended (PCB Mount). = 100V DS Characteristic =25%) A =70%) A & ' & & =25 Characteristic * IRFM120A BV = 100 V DSS = 0 DS(on 2 SOT-223 Gate 2. Drain 3. Source Value Units V 100 2 "20 V ...
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... IRFM120A Electrical Characteristics Symbol Characteristic BV Drain-Source Breakdown Voltage DSS .BV/.T Breakdown Voltage Temp. Coeff Gate Threshold Voltage GS(th) Gate-Source Leakage , Forward I GSS Gate-Source Leakage , Reverse I DSS Drain-to-Source Leakage Current Static Drain-Source R DS(on) On-State Resistance g Forward Transconductance fs C Input Capacitance iss C Output Capacitance ...
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... Fig 6. Gate Charge vs. Gate-Source Voltage ( IRFM120A " ...
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... IRFM120A Fig 7. Breakdown Voltage vs. Temperature Junction Temperature [ J Fig 9. Max. Safe Operating Area DS(on) ...
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... DUT 10V DUT R 2 Current Sampling ( Resistor out 90 0.5 rated 10 d(on DSS IRFM120A Charge d(off off BV DSS 1 ---- 2 -------------------- = DSS Time t ...
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... IRFM120A Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT Driver Driver ) DUT ) DUT ) + Same Type as DUT • dv/dt controlled controlled by Duty Factor 0? • Gate Pulse Width -------------------------- D = Gate Pulse Period I , Body Diode Forward Current ...
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