FDMS86102LZ Fairchild Semiconductor, FDMS86102LZ Datasheet - Page 5

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FDMS86102LZ

Manufacturer Part Number
FDMS86102LZ
Description
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor's advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer
Fairchild Semiconductor
Datasheet

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FDMS86102LZ Rev. C
©2011 Fairchild Semiconductor Corporation
Typical Characteristics
1000
0.001
100
0.01
0.5
10
0.1
1
10
2
1
10
-4
-4
DUTY CYCLE-DESCENDING ORDER
D = 0.5
SINGLE PULSE
R
T
A
θ
JA
= 25
0.2
0.1
0.05
0.02
0.01
= 125
Figure 14.
o
C
10
10
o
C/W
-3
-3
Figure 13. Single Pulse Maximum Power Dissipation
T
Junction-to-Ambient Transient Thermal Response Curve
J
= 25 °C unless otherwise noted
10
10
-2
-2
SINGLE PULSE
R
θ
JA
t, RECTANGULAR PULSE DURATION (sec)
t, PULSE WIDTH (sec)
= 125
o
C/W
10
10
-1
-1
5
1
1
NOTES:
DUTY FACTOR: D = t
PEAK T
10
10
J
= P
DM
x Z
P
θJA
DM
1
/t
x R
100
2
100
θJA
t
1
+ T
t
2
A
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1000
1000

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