FDMS86102LZ Fairchild Semiconductor, FDMS86102LZ Datasheet - Page 2

• Manufacturer Part Number: FDMS86102LZ
• Description: This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor's advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
• Manufacturer: Fairchild Semiconductor

FDMS86102LZ Rev. C
©2011 Fairchild Semiconductor Corporation
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
NOTES:
1. R
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. Starting T
4. The diode connected between gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
BV
ΔBV
I
I
V
r
g
C
C
C
R
t
t
t
t
Q
Q
Q
Q
V
t
Q
DSS
GSS
ΔV
d(on)
r
d(off)
f
rr
DS(on)
FS
the user's board design.
GS(th)
SD
ΔT
ΔT
iss
oss
rss
g
g(TOT)
g(TOT)
gs
gd
rr
Symbol
θJA
DSS
GS(th)
DSS
J
J
is determined with the device mounted on a 1 in
J
= 25
°
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Total Gate Charge
Gate to Drain “Miller” Charge
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
C; N-ch: L = 1 mH, I
AS
Parameter
= 13 A, V
DD
2
T
= 90 V, V
pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
J
a.
= 25 °C unless otherwise noted
50 °C/W when mounted on a
1 in
2
GS
pad of 2 oz copper
= 10 V.
I
I
V
V
V
I
V
V
V
V
V
f = 1 MHz
V
V
V
V
V
V
I
D
D
D
F
DS
GS
GS
GS
GS
GS
DS
DS
DD
GS
GS
GS
GS
GS
= 250 μA, V
= 250 μA, referenced to 25 °C
= 250 μA, referenced to 25 °C
= 7 A, di/dt = 100 A/μs
= 80 V, V
= 5 V, I
= ±20 V, V
= V
= 10 V, I
= 4.5 V, I
= 10 V, I
= 50 V, V
= 0 V to 10 V
= 0 V to 4.5 V
= 50 V, I
= 10 V, R
= 0 V, I
= 0 V, I
2
DS
Test Conditions
, I
S
S
D
D
D
D
D
= 7 A
= 2 A
GS
= 7 A
GS
D
GS
GEN
= 250 μA
= 7 A,
DS
= 7 A
= 7 A, T
= 5.8 A
= 0 V
= 0 V,
= 0 V
= 0 V
= 6 Ω
V
I
D
DD
= 7 A
J
= 50 V,
= 125 °C
(Note 2)
(Note 2)
θJC
is guaranteed by design while R
Min
100
1.0
b.
125 °C/W when mounted on
a minimum pad of 2 oz copper
18.6
23.5
31.2
0.81
0.72
Typ
979
175
1.5
8.9
6.7
2.6
2.5
7.8
2.4
2.6
0.9
26
19
16
35
25
70
-6
1305
θCA
Max
235
www.fairchildsemi.com
±10
1.3
1.2
2.5
15
14
10
35
10
22
11
57
40
25
37
42
1
is determined by
mV/°C
mV/°C
Units
mΩ
pF
pF
nC
μA
μA
pF
nC
nC
nC
nC
ns
ns
ns
ns
ns
Ω
V
V
S
V